| Spintronic devices that incorporate electronic components and magnetic components have been widely used in information storage.The discovery of the giant magnetoresistance effect is considered to have been the beginning of spintronics.The period between the discovery of magnetoresistance and its commercial availability as magnetic sensors was relatively short.At the same time,resistive random access memory based on the resistive switching effect is considered as one of the most promising candidates for next-generation memories.Determining RS and MR in a system can further increase the data storage density and realize multibit non-volatile data storage.In this paper,the SiO2-based samples including Pt/SiO2-Co/Au and Pt/SiO2-Co/ZnO-Co/Au ones were designed and fabricated.Their resistive switching properties and the corresponding magnetoresistance and magnetic properties are studied.The results are summarized as follows:?1?A series of SiO2-Co samples with different Co concentrations were grown.They are designated as [Co?0.6 nm?/SiO2?x nm?]60?x=0.4-0.7?.The results show that [Co?0.6 nm?/SiO2?0.6 nm?]60 film exhibit large magnetoresistance ratio and resistance value.?2?Based on [Co?0.6 nm?/SiO2?0.6 nm?]60,the Pt/SiO2-Co/Au sample was designed and fabricated.The sample exhibits bipolar resistance switching properties.So the resistances of the Pt/SiO2-Co/Au sample can be divided into high and low two resistance state by electrical stimuli.The sample,at high and low resistance states,exhibits room temperature magnetoresistance,respectively.The room temperature magnetoresistance ratio at high and low resistance states was-0.49 % and-0.19 %,respectively;this may be due to spin-dependent tunneling between Co particles through the SiO2 barriers.The resistive switching behavior can contribute to the migration of the oxygen ions resulting in the accumulation of the oxygen vacancies and the existence of Co in the SiO2-Co layer of the SiO2-Co sample.Not only of this,the sample exhibits the pronounced electric field-induced saturation magnetization modulation,accompanied with the bipolar resistive switching during the set and reset processes.?3?Considering the weak room temperature magnetoresistance ratio of Pt/SiO2-Co/Au,the Pt/SiO2-Co/ZnO-Co/Au sample,in which the storage layer combines a nanostructured SiO2-Co layer and a ZnO-Co layer was designed.The device can simultaneously show magnetoresistance and resistive switching at room temperature.The magnetoresistance ratio of the sample at high resistance state reaches-6.7 %,which is remarkably enhanced compared with Pt/SiO2-Co/Au sample.Moreover,the magnetization of the sample is also modulated by the resistive switching.The sample at high?low?resistance state exhibits small?large?saturation magnetization.In conclusion,a series of SiO2-Co-based samples were designed and grown.Their resistive switching,magnetoresistance and magnetic properties were investiga ted.It is found that the samples exhibit bipolar resistive switching properties.Moreover,t he samples,at high and low resistance states,exhibit magnetoresist ance and different saturation magnetizations at room temperature,respectively.Therefore,through electrical and magnetic control,multiple resistance states are achieved in this system,which have promising applications in multibit non-volatile data storage.Our study can provide a new clue to design and fabricate multi-functional devices in future. |
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