ZnO And SiO₂ Nanostructures Prepared By Magnetron Sputtering And Au Catalysts Template On Si(111) Substrates

More and more attention has been paid to the semiconductor nanowires thanks to their unique electrical and optical properties.The finding of porous silicon and latter nano-crystal of silicon opened the possibility of developing Si-based nanostructures for photoelectron devices such as high speed field effect transistor, biologic and chemical sensor,low energy consumption luminescence facilities, The obvious attractiveness of this application is the possibility for integrating optics and microelectronics on a single Si-based substrate using the well developed and low-cost silicon based technology.This research mainly includes two aspects,firstly we used the magnetron sputtering technology and the hot annealing technology to fabricate Au nano spots on Si(111)substrates.Based on the fabricated,we adopted ZnO and SiO₂ nanostructures on many kinds of substrates,and we tested and studied the structures, compositions,morphologies by many kinds of electronic microscopes such as SEM, TEM,HRTEM,XRD,FTIR,AFM and SAED etc.Silica(SiO₂),which is the important component in glass,Si-based microelectronic derives and optical fibers,is an increasingly important candidate to form 1D nano-materials.At present,the investigate of filmy Au/SiO2 composite materials is rarely at home and abroad,so it has a bigness investigate fild.Wurtizitic ZnO is a direct wide-band gap(3.36eV at 300K)semiconductor with many applications,whose best photoelectronic properties have gained itself substantial interest from all over the world in the past ten years.Analyzing the growth process of ZnO and SiO₂ nanostructures and the results of test,we also carried on a iscussion to the ZnO and SiO₂ nanometer structures' growth mechanism.The primary contents are as follows:(1)We prepared the Au nano spots on Si(111)substrates by the magnetron sputtering technology and the hot annealing technology.We discovered that the ZnO and SiO₂ nanometer structures were affected by the sputtering film thickness,the annealing temperature and the annealing time,and prepared the well arranged Au nanospots lattices.This Au nanospots lattice played a vital role in the growth of ZnO and SiO₂ nanostructures.(2)We have prepared Au/SiO₂ composite nanoparticle films by magnetron sputtering.The microstructure and the surface morphology of Au/SiO₂ composite films annealed at different temperatures were investigated using scanning electron microscope(SEM)and x-ray diffraction(XRD).Find best condition of growth.(3)The SiO₂ nanowires have a clean surface with diameters of around 100rim and lengths of about 4 microns.The growth mechanism is discussed briefly.The growth of nanowires were governed by VLS growth mechanism.(4)On the foundation of prepared Au nano spots,we adopted a process with a evaporated Zn source to prepare many kinds ofZnO nanostructures(5)We carried on many equipments and technologies,such as SEM,TEM, HRTEM,XRD,FTIR,AFM and SAED etc.to test and characterize the as-prepared nanostructure samples of ZnO and SiO₂ nanometer structures.