Fabrication And Electromagnetic Absorbing Properties Of Two Dimensional Ti₃C₂T_x And Its Composites

The recently developed two-dimensional?2D?graphene and graphene analogue materials have broadened the field of absorbing materials and gained widely attention.MXene,a new type of 2D carbon or nitride material,has shown excellent electrochemical?EM?properties because of its layered structure,large specific surface area and adjustable layer spacing,and has large potential application in electromagnetic absorber.In this study,Ti₃C₂T_x-ZnO nanocomposites were prepared by using a simple coprecipitation method.The electromagnetic wave absorption properties of Ti3C2 Tx were improved.Firstly,Ti₃AlC₂ was choosed and etched away the Al layers by immersing in Li F + HCl solution The effects of etching time and etchant concentration on microscopic morphology,phase composition and valence distribution were studied.At the same time,the presence of Li+ will also help to expand the spacing of Ti3C2 Tx.The optimum process of Ti3C2 Tx was 6mol/L HCl + Li F and etched for 48 h.Ti₃C₂T_x was then immersed in seed solution to anchor ZnO seed layers on the surface of nanosheets.Because of the electrostatic interactions and ion-exchange,the existent surface groups were served as recombination centers and benefit the intercalation of ZnO nanoseeds.Finally,ZnO nanorods were grown using a coprecipitation method.As-seeded Ti3C2 Tx was immersed in growth solution and ZnO nanorods were grown radically along the surface and entered the interlamination,constituting Ti₃C₂T_x-ZnO nanocomposites.Finally,the electromagnetic wave absorption performance of Ti₃C₂T_x-ZnO was studied.The maximum reflection value of Ti3C2 Tx was-6.70 d B?14.4 GHz?for Ti3C2 Tx,while and the value of ZnO nanorod was-11.26 d B?18.0 GHz?.Ti3C2 TxZnO nanocomposites delivered a substantially enhanced EM absorbing performance with an optimum reflection loss of-34.80 d B?17.0 GHz?when the reaction time was 2.0 h and the concentration of Ti3C2 Tx was 0.3 g/L.The optimum bandwidth was 1.2 GHz.The EM absorption performance can be effectively controlled in the range of 14.0-18.0 bands by changing the growth time of ZnO,owing to the construction of unique semiconductive networks and larger interfaces.This study demonstrates a new strategy applicable in maximizing their applications in EM absorbing materials.