Rf Magnetron Sputtering Process And Structural Properties Of Pzt Thin Films

Recently, the fabrication, stuctures, properties and appplications of ferroelectric films become to be a important part of the original materials science all over the world. Ferroelectric thin film have been paid more and more attention for its nice ferroelectric property, esspecially in the application of FRAM . The Pb(ZrxTi1-x)O3 (PZT) is one of the most important ferroelectric materials nowadays. In this paper, the fabrication process, anneal process, micro-structure and ferroelectric properties of Pb(Zr0.52Ti0.48)O3 thin film were systematically studied from experimental aspect.Research the influence of the Pt/Ti electrode preparing technology on the stuctures and properties of the film; obtain some regular pattern between the film preparation technics parameter and the film structure and performance.RF magnetron sputtering technology have been utilized to deposite the PZT thin films on 4-inch Pt/Ti/SiO2/Si substrates.Analyses by the aid of atom force microscopy (AFM), X-ray diffraction (XRD) and the Precision LC ferroelectric materials test system to analyse the effect of the deposition technology to the film stuctures, and ferroelectric performance, study the relationship between the PZT film preparation technics parameter and the film capability. Have got an optimal process parameter: the sputtering atmosphere Ar/O2 is 45/0.65, the deposition pressure is 0.530Pa, substrate temperature is 200℃, sputtering power is 160w, we can got a film with high orientation, nice ferroelectric properties.Rapid thermal annealing have been utilized to crystallyization of PZT films,study the effect of the crystallization technology to the film stuctures, and ferroelectric performance, the rusult showed that: when the the annealing temperature is 650℃, annealing time is 60s, annealing atmosphere is Ar/O2=1/1, we can obtain the film which remnant polarization >60μC/cm2, and leakage current is 2.54×10-7Amps/cm2, basically meets the requirements of FRAM material properties. So it is expected to be widely applied in FRAM fabrication. We also studies the effect of the heating program to the pzt film properties, and find out that the optimized heating program can greatly improve the remnant polarization of the film.