Transport Properties In Monolayer-bilayer-monolayer Graphene Planar Junctions

The transport study of graphene junction has become one of the focus in graphene research since it was fabricated in the laboratory in 2004.Recently,the transport properties in graphene planar junctions have generate great interest.The transport study of graphene junction has become one of the focus in graphene research.There are two stacking configurations for monolayer-bilayer-monolayer graphene planar junctions.One is the two monolayer graphene contacting with the bottom layer of the bilayer graphene,while the other is these two monolayer graphene contacting with the different layer of the graphene bilayer.In this paper,based on the Landauer-Büttiker formula,we study the transport properties of these two configurations.The influence of the local gate potential in each part,the bias potential in bilayer graphene,the disorder and the external magnetic field on the conductance are obtained.We find the conductance of the two configurations can be manipulated by all of these effects.Especially,one can distinguish the two stacking configuration by introducing the bias potential into the bilayer graphene.The strong disorder and the external magnetic field will make the two stacking configurations indistinguishable in the transport experiment.