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Preparation And Device Research Of New Type Two-dimensional Carbide Materials

Posted on:2018-08-04Degree:MasterType:Thesis
Country:ChinaCandidate:X G ZhuFull Text:PDF
GTID:2321330542479711Subject:Optical engineering
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Since 2004,the discovery of graphene has aroused great concern for two-dimensional materials,which be a step forward in the development of nanomaterials.Similar two-dimensional materials with a band gap have been focused,such as Mo2S,W2S,Mo2Se,etc[1,2].Transition metal carbides of Mo2C are a new class of materials that are both ceramic and metallic.On the one hand,they have high hardness,high melting point,high stability and good corrosion resistance at high temperatures,good thermal shock resistance to low chemical resistance and so on.On the other hand,they show excellent catalytic activity and better sub-metal conductivity,comparable to precious metals and to often used in many reactions.Thus,growth of large-scale high-quality transition metal two-dimensional materials for further studying its performance is necessary to exploxe two-dimensional material application.In this paper,a large amount of ultra-thin monocrystalline Mo2C was prepared by CVD method.The Cu/Mo double-lamination substrate was used to introduce methane,and hydrogen and CH4 gases as the reaction source.The two-dimensional Mo2C materials were grown on Cu/Mo substrate,and the effect of praparing the large area high quality single crystal Mo2C include the gas flow rate,growth temperature,growth time.And then the prepared Mo2C was characterized by optical microscopy,XRD,Raman,XPS,SEM and TEM in detail.The two-dimensional Mo2C prepared by CVD was of high quality and few defects.The samples were characterized by X-ray photoelectron spectroscopy and optimized under different conditions to optimize the optimal conditions for growth.Finally,the transfer method of the single film and performance were investigated systemically.Firstly,Mo2C was separated from the substrate coated with PMMA as the protective layer before copper was removed from the ammonium persulfate solution.And then,Mo2C is transferred onto the doped Si with a thickness of 300 nm SiO2 layer,the field effect structure device was prepared by micro-nano processing.Through the testing of the semiconductor tester 4200,results show that Mo2C shows excellent conductivity and conductive capacity adjustable performance.
Keywords/Search Tags:2D material, CVD, Mo2C, FET
PDF Full Text Request
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