Simulation Of Ni And Fe Doped GeTe-based Magnetic Phase Change Material

With the rapid development of information technology,the requirement for data storage and information processing increases sharply,so that people have to develop high performance storage materials to satisfy that.The magnetic phase change material has attracted wide attention, and was believed to be reliable material for next generation of logic function devices because it has the characteristics of both diluted magnetic semiconductor and phase change material. GeTe,used as the phase change material, has the characteristic of rapid phase transition,and remarkable change in electronic properties after phase change.Because of its stable crystalline structure at room temperature,Ge Te has attracted intensive attention in magnetic phase change material research.Based on the first principle and ab initio method, combining with the plane-wave method, the models of GeTe,Ge1-xFexTe and Ge1-xNixTe were build up, then, the structures of these models were optimized and the structures of amorphous materials based on molecular dynamic method were obtained. Based on these models,we calculated their magnetic moments, density of states and the electron localization functions. We found that the magnetic moment of low doping crystalline GeTe material increases as the X increases;When reaching a certain doping concentration,the magnetic moment decreases as the X increases; The macroscopic magnetic moment of amorphous GeTe-based magnetic phase change material is nearly 0.Then we analyzed the origination of magnetism of GeTe-based magnetic phase change material.It has a great significance to the magnetic control of magnetic phase change material and the development of new logic function devices.