Study On Manufacturing And Resistive Switching Polarity Of ZnO Memristor

Memristor is a nonlinear passive dynamic device, it has the advantages of high integration, fast erasing and writing speed, low power consumption, perfect compatibility with CMOS and so on. Although, researchers have done lots of work on memristor for years, memristor is hard to be manufactured, because of a variety of reasons. At present, many kinds of materials have been verified with the property of resistance switching, but it's difficult for us to explain their microscopic mechanism accurately, limited to the lack of physical characterization of nanometer scale device. Compared with other materials, binary oxides is the most promising material to be used in the function layer of RRAM with the advantages of manufacturing,simple component and better research progress. ZnO is a material with rich physical features, it can also be used in high frequency, high power, high temperature and anti-radiation device, despite of its good resistance switching property.In order to achieve the manufacturing of RRAM, It's of great significance to research the manufacturing technology and micro mechanism of ZnO RRAM.In this paper, we use the Magnetron sputtering apparatus to manufacture two kinds of RRAM cell, one is simple sandwich structure, the other is crossbar structure, the thickness of the top electrode, bottom electrode and the function layer is are 500 nm, 480 nm and 50 nm. At the same time, we use the Keithley-4200-SCS to test the VI ? curve of the cell. After applying a voltage to the cell, we can observe that the filament mechanism switch to homogeneous conductivity mechanism by changing the limited current. then I have explained it's microscopic mechanism by data and curve fitting successfully. In order to improve the Switching characteristics of ZnO RRAM, we manufacture three different electrode device : i/Al/ZnOT(490nm/60nm/520nm) and l/Al/ZnOA(540nm/80nm/510nm).Then we use the Keithley-4200-SCS to test their VI? curve and explained their microscopic mechanism by data and curve fitting in detail. At last, we test thier repeatability and retention characteristics, and get a perfect result.By analyzing the experimental data, we can find out that the device of l/Al/ZnOA has the properties of low Set, Reset voltage, low power consumption, larger ratio of onoffR/R, perfect repeatability, stronger keeping property. We can conclude that the l/Al/ZnOA film will be one of the most promising candidates in of RRAM.