Design And Verification Of 1200V 75A IGBT For Electric Vehicle

IGBT (Insulated gate bipolar transistor) is a Darlington structure composed by MOSFET and bipolar power transistor. It is one of the core components of electric vehicle, which has the ability to convert DC to AC power. It shows many advantages, such as MOSFET's low input impedance, small control power, simple driving circuit, high switching speed, as well as bipolar power transistor's high current density, low saturation voltage, high current processing capability. However, the commercialized IGBT of electric vehicle can't be manufactured in our country, most of which are imported from foreign countries. As a result, the research and design of the Electric vehicle specialized IGBT must be paid more attention.According to the structure and work principle of Electric vehicle specialized IGBT, the relationship between the structure of Electric vehicle specialized IGBT and its characteristics are analyzed theoretically, and the design basis of IGBT's major parameters, such as threshold voltage, forward breakdown voltage and turnoff time, has been summarized. Then the structure parameters of IGBT are designed, square cell, plane gate, and NPT structure are applied in the design. Based on the parameters, the appropriate processes and condition are selected to establish the process model of IGBT.After the 1200V/75A non through type (NPT) IGBT chip package, the test results can realize the given control target. The breakdown voltage is above 1400V.The saturation voltage is 2.2-2.7V.The threshold voltage is 5V. Short circuit safe working area test by lOus. Short circuit current is less than 430A. and through the reliability and electric vehicle simulation of the preliminary practical verification.The feasibility and reliability of this design were verified through simulation experiments of electric vehicle.