Preparation And Photoelectric Properties Of Antimony Sulfide Thin Films

Sb₂S₃ is a V-VI sulfide semiconductor with low toxicity and low price.It is one of the most promising materials for thin film solar cells application,because it has a strong absorption coefficient???105 cm-1?,and controllable band gap?about 1.5-2.2 eV?covers the visible and near IR range of the solar energy spectrum.it is considered the most promising widely used solar cell materials.At present,most of the Sb₂S₃ films is used as an absorptive layer or a transition layer for organic-inorganic hybrid solar cells,it has achieved 7.5% photoelectric conversion efficiency.The preparation method is mainly chemical bath deposition,but most of the obtained films are amorphous or granular,which would limit the further improvement of its defects.Therefore,It is of great importance to develop a method for the preparation of Sb₂S₃ thin film with high crystal quality,novel structure and low consumption to explore its solar cell application.In view of this situation,a simple water?solvent?thermal method was used to prepare Sb₂S₃ films with good crystallin quality and novel morphology on ITO substrates.Finally the Sb₂S₃ film solar cells were fabricated.The details are as follows:?1?Preparation of cellular Sb₂S₃ thin films and the study of photoelectric properties.The Sb₂S₃ thin films were prepared by solvothermal method combined heat treatment using ethanol and deionized water as the solvent.Analyzed the condition such as reaction time,temperature and the ratio of alcohol to water on the crystal structure and morphology of the films,and the growth mechanism of the films were also discussed.The results show that the band gap of Sb₂S₃ film is 1.6¹.7 eV,and it has good light absorption performance in the visible light range.The photoelectric chemical test also show that Sb₂S₃ thin film has excellent photoelectric properties suitable for solar cell materials.?2?Preparation of mesh-like Sb₂S₃ films and properties of Sb₂S₃/PbS thin film solar cells.In this paper,a simple one-step hydrothermal reaction process was used to prepare the Sb₂S₃ crystal films on ITO substrate.The Sb₂S₃ bandgap value is about 2.2 eV.The structure and morphology of the samples in different reaction stage were characterized analyzed,and the growth mechanism of the films were also discussed.The results show that both the reaction temperature and the time influence the formation of the mesh-like films.PVP-K 30 can control the reaction rate and promote the orientation growth of the films,which plays a key role in the formation of the mesh-like films.The Sb₂S₃/PbS device power conversion efficiency of 0.025% which has simple structure and good stability.