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Investigation Of The Optical And Electrical Properties Of ZnO/Cu/ZnO Multilayer Films By Magnetron Sputtering

Posted on:2018-11-07Degree:MasterType:Thesis
Country:ChinaCandidate:L W WangFull Text:PDF
GTID:2322330515984399Subject:Condensed matter physics
Abstract/Summary:PDF Full Text Request
Nowadays,the “sandwich” structure of transparent conductive oxide films(TCO)that possess a simple preparation technology and good repeatability is applied to solar cells,light-emitting diodes(Leds),liquid crystal display(LCD),flat panel displays(FPD),which is a hot content of condensed matter physics and optoelectronic material.ZnO/Cu/ZnO multilayer films not only have a excellent optoelectronic property,but also low cost in comparison with other noble metal(Ag,Au,Pt).It can clearly reduce the cost of device applied in optoelectronic device.Therefore,we explore the preparation technology of ZnO/Cu/ZnO multilayer films,optimize its optoelectronic property for further knowing the basic parameter of the multilayer films,so this research can provide a reference value.In this paper,ZnO/Cu/ZnO multilayer films were deposited on galss substrate by magnetron sputtering,and we investigate its optoelectronic property from three aspects of ZnO thickness,Cu thickness and stablity.The research content and results are as follows:1.ZnO/Cu/ZnO multilayer films were deposited on glass substrate by magnetron sputtering.In this process,we changed ZnO thickness and fixed Cu thickness.The effect of ZnO thickness was investigated on optical and electrical properties of multilayer films by ultraviolet-visible spectrophotometer and Four point probe resistance tester.This experimental results indicated that the increasing of ZnO thickness could improve the average transmittance of multilayer films in visible region,which was in accordance with the FDTD solution.Besides,we found that the influence of ZnO thickness was very slight on the sheet resistance of multilayer films.2.According to the previous experimental condition,the ZnO/Cu/ZnO multilayer films were deposited on glass substrate by magnetron sputtering.In this process,we changed Cu thickness and fixed ZnO thickness.The effect of Cu thickness wasinvestigated on optical and electrical properties of multilayer films by ultraviolet-visible spectrophotometer and Four point probe resistance tester.This experimental results indicated that the increasing of Cu thickness was prejudice to the average transmittance of multilayer films in visible region.However,it could reduce the sheet resistance of multilayer films and improve the conductive properties.3.The fabricated ZnO/Cu/ZnO multilayer films were put in nature environment for 90 days in order to investigate the stability of FOM.The experiment results indicated that the optical and electrical properties of ZnO/Cu/ZnO multilayer films had a good stability.In this paper,we optimize the experimental parameters of ZnO/Cu/ZnO multilayer films,obtain the best experimental parameters,and fabricate the FOM(2.95×10-3?-1)of multilayer films.Therefore,it can be applited to solar cells,light-emitting diodes,flat planel displays,and so on as window electrode in multilayer films.
Keywords/Search Tags:Magnetron sputtering, ZnO thin films, Cu thin films, Optoelectronic properties, SPR
PDF Full Text Request
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