Research On Silicon Carbide Single Phase Inverter

Compared with traditional Si devices, SiC devices have excellent temperature resistance,voltage resistance, high power density and high frequency performance, however, inverters based on Si IGBT and Si FRD are widely used in power electronic devices, they have many disadvantages, such as low efficiency, high power consumption, temperature resistance, low switching frequency, large size and heavy weight,new switching devices have been investigated to improve the existing drawbacks of inverters. Therefore, the full SiC power module (SiC,MOSFET+SiC, SBD) is applied to a single-phase inverter with high frequency AC output.Through simulation and platform built. study the effect of SiC power devices on the efficiency of single phase inverters with high frequency AC output. Main work and research results of this paper are as follows:1?Dynamic performance of the SiC MOSFET/SBD device is simulated by Pspice simulation software and compared with the traditional Si devices, shows excellent switching and high frequency performance of SiC devices.2?In order to improve the efficiency of the inverter again, in the inverter using phase-shifted full-bridge soft-switching technology, the switch tube (SiC MOSFET) in the zero-voltage state to open, reduce the opening loss, improve the overall inverter effectiveness,simulation of the whole machine efficiency of 96.5%.In the pspice built the phase shifted full bridge inverter circui simulation model ,Si IGBT+SiC SBD and SiC MOSFET+SiC SBD as the switch tube of the phase shifted full bridge inverter circuit,switch tube (Si IGBT/SiC MOSFET)are opened in the zero voltage state, however, the loss of the whole silicon carbide power module (SiC MOSFET+SiC SBD) is much less than the loss of Si IGBT+SiC SBD. Under the environment of Matlab Simulink, the closed-loop system of the phase shifted full bridge inverter is simulated, and the output voltage can follow the given voltage well.3?According to the dynamic performance of SiC MOSFET, a driving circuit is designed and verified by experiments, driving circuit obtain the high level is +19.7V, and the low level is-4.3V drive pulse which conforms to the driving requirement of SCT2080KE. An experimental prototype of full silicon carbide power module with output voltage of 220V and output power of 1.5kW was built, Machine efficiency of 88.2%.