The Preparation And Performance Research Of Quantum Dots Sensitized P-type NiO Solar Cell

Quantum dot-sensitized solar cells(QDSSCs)were a promising alternative to dye-sensitized solar cells(DSSCs),which had been attracted significantly attention in recent years for its high theoretical power conversion efficiency,low cost,easy fabrication.N-type semiconductor oxide as photoanode had been maturely researched,so P-type semiconductors have begun to be researched by a great many relevant groups.P-type semiconductors are of great importance for P-N type laminated sensitized solar cell development and application due to its relatively wide band gap and the suitable price characteristics.NiO was a most popular P-type semiconductor oxide with high stability and good electrical conductivity for sensitized photocathodes.However,the research of the prepatation and properties for P-type QDSSCs needs to be thorough.In this paper,different morphology of the NiO was synthesized by two different methods,and quantum dots(QDs)were successfully employed in QDs sensitized p-type NiO solar cell,which would be intensively studied in the way of material synthesis and photoelectric properties.Firstly,the nanosized urchin-like and flower-like NiO were respectively prepared by a simple hydrothermal method and homogeneous precipitation,and the influence of different preparation conditions on the morphology of NiO was studied.It was demonstrated that within 4~16 h,the morphology of the NiO was changed with the increase of reaction time.At first,the morphology changed from uneven urchin-like into uniform particle size distribution of urchin-like gradually.And then a ball structure was appeared.Finally,shapeless sediment was obtained.The morphology of the NiO was changed not obvious in the range of 80°C~120°C.Secondly,PbS quantum dot sensitized urchin-like NiO was prepared by chemical bath deposition method(CBD),which as photocathode was assembled into the solar cell.And the influence of different morphology NiO,NiO film thickness,PbS quantum dots deposition cycles on the photoelectric performance of solar cell was studied.The analysis of samples material showed that PbS quantum dots were uniformly deposited on NiO film,and the photo absorption capacity of the sample was strongest when the deposition cycle of PbS quantum dots was 4.The photoelectric performance analysis of solar cell revealed that under 120 °C reaction 8 h,the morphology of urchin-like NiO was the best.When the thickness of NiO film was approximately 3 ?m and the deposition cycle of PbS quantum dots was 4,the maximum power conversion efficiency of 1.07% was achieved,and the maximum IPCE response of the sensitized NiO was approximately 50% at 340 nm.Finally,CdSe quantum dot sensitized flower-like NiO was prepared by chemical bath deposition method(CBD),which as photocathode was assembled into the solar cell.And the influence of CdSe quantum dots deposition cycles on the photoelectric performance of solar cell was studied.The analysis of samples material demonstated that CdSe quantum dots were linked well together with NiO,and were uniformly deposited on NiO film.The absorption capacity of the sample was strongest when the deposition cycle of CdSe quantum dots was 10.The photoelectric performance analysis of solar cell showed that the deposition cycle of CdSe quantum dots was 8,the maximum power conversion efficiency of 1.06% was achieved,and the maximum IPCE value was about 40% at 340 nm.NiS and Pt electrode were respectively measured by EIS,indicating that the NiS electrode could be faster than Pt to catalyze redox couple for recycling.