Failure Analysis And Process Optimization Of CMOS Image Sensor

The image sensor was invented in the late 1960 s. It was widely used in digital camera, security monitor, mobile phone, video camera, computer camera, game devices etc. Image sensor were used everywhere of our lives.The research of CMOS(Complementary Metal Oxide Semiconductor) image sensor and CCD(Charge-coupled Device)image sensor were both began from 1960 s, then the CCD image sensor was used more widely than CMOS image sensor in long period due to good image quality, higher resolution, lower noise and better sensitivity. The application of CMOS image sensor was limited by semiconductor manufacture level. Recently, with the quick progress of IC design and semiconductor manufacture, most of above issues can be fixed and the CMOS image sensor becomes focus of study again.The history, theory, application, process and develop progress of CMOS image sensor were summarized in this paper. The advanced failure analysis technology and method include Optical Microscope, Scanning Electron Microscope, Transmission Electron Microscope, Focused Ion Beam, Secondary Ion Mass Spectrometry and Auger Spectrometry were introduced.This dissert also introduced the failure analysis case of typical CMOS image sensor failures, i.e. dead column, dead row, dead pixel, I2 C failure. Base on failure analysis results, different split and window check experiments were designed to verify the failure model and optimize the process, the optimal process were already implemented into manufacture and gain big benefits.