Research On Interconnect Modeling And Transmission Characteristics In Three-Dimensional Integrated System

The three-dimensional integrated circuit interconnects the chips to enhance the integration performance of the system and meets the requirements of miniaturization and high performance of the current circuit.Therefore,it has been favored by experts and scholars in recent years.Through Silicon via(TSV)replaces the traditional solder wire to achieve communication between adjacent chips.With the superior electrical performance in the speed and power consumption,and good compatibility with CMOS technology,TSV has become a key interconnect technology for three-dimensional integrated systems in semiconductor industry.Such a metal-oxide-semiconductor(MOS)structure will form the MOS capacitance which will have the remarkable influence on the signal transmission performance of TSV interconnection network,and the accurate calculation of MOS capacitor is the key to TSV electrical modeling.Therefore,a theoretical model of MOS capacitance for T-TSV considering accurate charge distribution is proposed based on the Poisson equation.Secondly,the analytical model of MOS capacitance for T-TSV is established after series connection of the oxide and the depletion layer capacitance and it can reasonably reflect the charge distribution with the change of depletion layer width.It turns out that the analytical model will significantly reduce the RMS error through the comparison between calculation and Ansoft Q3 D simulation.Finally,a pair of T-TSV is established on the theoretical basis of RLGL model,which provides detailed parameter formula.Then,analytical model parameters are transformed into corresponding S parameters according to the conversion formula of the interconnecting transmission model.RLGC analytical model is proved to be correct after comparison with the Ansoft HFSS circuit simulation result.What’s more,it has made an important guiding significance to the actual engineering design for the further study of the signal integrity by changing the TSV interconnection network part parameters.