Preparation And Properties Of High Activity ?-Ga 2 O 3 /SiC Nanocomposites Under Microwave Field

Monoclinic gallium oxide(?-Ga2O3),a wide-band-gap semiconductor(Eg=4.2-4.9 eV),has gained great attention because the strong oxidation reduction capability in photocatalysis field.However,there are many insufficiencies,such as,the poor crystallinity,large crystal sizes,and the complicated technologies route and so on in present reported methods.In this paper,the ultrafiine and high activity ?-Ga2O3/SiC composites possessing the microwave absorption capacity have been synthesized.This has been achieved using Ga(NO3)3 aqueous solution as Gallium source,urea as precipitation combined and SiC as carrier and microwave absorbing materials by the micro wave-ass isted hydrothermal homogeneous precipitation and home-built "flash heating furnace" treatment method.And the composite characterized using DLLS,XRD,TEM,SEM,XPS,DRS and UV-Vis technics.The effect of heating treatment methods,microwave power,reaction time and particles size of SiC on the morphologies,structures and the photocatalytic properties of composites was investigated in detail.In microwave field,the photocatalytic activity and kinetic reaction law of?-Ga2O3/SiC composites was examined using microwave electirodeless discharge lamp(MEDL)as the light source and rhodamine B(RhB)as the target degradation product under different conditions.The result showed that the reasons for the improvement in photo catalytic activities are because of that there is a synergy effect when theconstituent techniques,i.e.,photocatalysis,microwave irradiation,and SiC introduction,are applied together.