Silicon on insulator(SOI)is considered to have a very important application potential in the construction of on-chip all-optical integrated optical paths due to its tight-binding nature and relatively high nonlinear response.In this paper,two main topics are studied: one is the effect of two-photon absorption on soliton capture in SOI waveguides,and the other is the transmission characteristics of sub-picosecond Airy pulses in SOI waveguides.The transmission characteristics of the pulse follow the Maxwell equations.Through a series of derivation,a nonlinear Schr?dinger equation(NLSE)describing the law of pulse transmission is obtained.Further through the step-by-step Fourier method,using Matlab software to solve the NLSE pulse transmission characteristics of the image can be obtained.Two topics were studied and analyzed in the thesis: The first topic is the soliton pulse self-trapping phenomenon in SOI waveguides.The formation of soliton traps,the Kerr effect in SOI waveguides,the effect of two-photon absorption and the effect of free carrier on soliton trapping,and the influence of free carrier lifetime on soliton trapping are discussed.The second topic studied the transmission of sub-picosecond Airy pulses in SOI waveguides.In the study,it was found that the effects of group velocity dispersion and third-order dispersion caused the time domain of the pulse to be reversed.Under the effect of the Kerr effect,soliton separation occurred and a new Airy pulse was generated.The effects of group velocity dispersion,third-order dispersion,Kerr effect,two-photon absorption effect,free carrier effect and other factors on pulse transmission characteristics of Airy are discussed. |