Research On Growth And Structural Properties Of 1.9?m GaSb-based Laser Materials

2~5 ?m mid-infrared semiconductor lasers have great application value in military,aerospace,communications and so on.And the GaSb-based semiconductor materials are the ideal choice for the 2~5 ?m mid-infrared lasers.Among them,the 1.9 ?m GaSb-based laser as a representative device of the 2 ?m semiconductor laser has great application in the fields of pumped solid-state laser,lidar,and laser rangefinder.The quality of semiconductor lasers depends on the quality of semiconductor materials in their active regions.Therefore,it is very necessary to carry out research on the material epitaxial growth epitaxial for 1.9 ?m GaSb-based laser.However,during the growth of the GaSb-based semiconductor material,problems such as lattice mismatch,defects,strain of the material will lead to deterioration of the crystal quality of the material,thereby affecting the development and application of the 1.9 ?m GaSb-based laser.Based on above problems,this dissertation carried out the epitaxial growth of 1.9 ?m GaSb-based type-I quantum well laser materials and research on the structural properties of this materials.Our study is divided into four sections:(1)GaSb film was grown on GaAs(100)substrates by molecular beam epitaxy(MBE)technology.The XRD curve FWHM is 319.2069 arcsec,and the PL curve FWHM is 71 nm.The characterization results show that we have successfully prepared high quality heteroepitaxial GaSb film.(2)The GaAsSb ternary alloy film materials were studied.By adjusting the As/Sb beam ratio,the GaAsSb ternary alloy film materials with Sb components of 6%,8% and 9% is obtained,which realizes the precise control of the components of GaAsSb ternary alloy film materials.(3)The InGaAsSb and AlGaAsSb quaternary alloy film materials were studied.We have successfully overcome the problem of difficulties on growth of GaSb-based quaternary alloy film materials.The InGaAsSb quaternary alloy film materials with In compositions of 10%,11%,and 13% have been prepared,all three InGaAsSb quaternary alloy thin film materials have achieved ~1.9?m photoluminescence.At the same time,we were prepared AlGaAsSb quaternary alloy film materials with low Al(30%)compositions and high Al(60%)compositions.These research works laid a foundation for the subsequent epitaxial growth of quantum well materials.(4)On the basis of successful preparation of GaSb-based alloy film materials,we were studied InGaAsSb/AlGaAsSb quantum well materials.By changing the structural parameters of InGaAsSb/AlGaAsSb quantum wells,high-quality quantum well materials were obtained.The XRD curve showed multistage satellite peaks,and the PL peaks were 1.883 ?m and 1.902 ?m which have good luminescence properties were.The InGaAsSb/AlGaAsSb quantum well material structure was simulated using PANalytical's X'Pert software,and compared with the actual XRD curve of the test,we have obtained a good agreement.Based on the above four parts of the research work,we obtained high-quality GaSb materials,controllable GaSb-based ternary,quaternary alloy thin film materials.On the basis of the research of GaSb-based thin film materials,a high-quality InGaAsSb/AlGaAsSb quantum well material with 1.883 ?m and 1.902 ?m photoluminescence was successfully obtained,which laid a solid foundation for the realization of 1.9 ?m GaSb-based laser devices.