Optimization Methods Of 3D Trench Electrode Silicon Detector Based On Double-Sided Etching

Detectors are mainly used in medical and particle physics fields.When measuring particle position by silicon micro-strip detector?SMD?,although the resolution is high,it is not radiation resistant.When the particle position is measured by 3D-Trench Electrode Detector?3D-TED?,the resolution is related to the electrode spacing.There is a slow region in the longitudinal direction of the chip in the region not etched through?used as a substrate to hold the detector bulk from falling off?.In this region,there will be a crosstalk of the signal in the detector arrays.Electrode is in fact a dead region,and it is large.Although the position resolution can be improved by reducing the electrode spacing,it will however make the detector easy to breakdown.In addition,the number of readout channels will increase,making the data processing circuit more complicated.In this paper,optimization methods have been put forward on the prototype of 3D-TED with innovation of the electrodes processing method?double-sided etch?.The TCAD-slivaco is used to simulate the electrical properties and verify the advantages of the structure.The main work in this paper is as follows:First,shell electrode detectors?HSED and ISED?are proposed.The structure concept is introduced briefly,and the structure parameters such as minimize size of nested area?dead region?are proposed.In order to prove the advantages of the structure,the size of dead region of these two detectors is compared with that of the traditional detector.a special array mode which can halve the dead region is also proposed.dead region in HSED is distributed in the edge of the chip in the practical application,and there is almost no dead region in the sensitive detection area of the chip.Second,in order to verify the advantage of introducing shell electrode,the electric field of HSED and ISED were simulated and compared with those of 3D-TED.It is found that the electric field of detector is improved after the introduction of shell electrode.The electric field of HSED with different d_bot and nesting-degree is simulated,it is concluded that the dead region size increases with the increase of d_bot and nesting degree.Third,assuming that MIP particles are enter to chip vertically without the scattering of particles in the detector medium,the dependence of signal crosstalk in an array on shell electrode parameters is studied based on the Ramo theory.It is found that the crosstalk of array signals decreases after the introduction of shell electrodes.The crosstalk of array signal decreases with the increase of nesting degree.Fourth,3D double-sided micro-strip detector?3D-SMD?is proposed.This paper introduces the new structure and novel simultaneous response mode of signal treatment.the readout channel number and position resolution of 3D-SMD whose are improved over3D-TED significantly are expounded.To verify that 3D-SMD has the characteristics of simultaneous response and can be used in two-dimensional position sensing,the response signal is simulated by ignoring the signal crosstalk in intermediate silicon layer.When the incidents position are different,the response order and the signal peak time between the3D-SMD collect electrodes in top cell and bottom cell are also different.