Vacancy-defect Scattering In Silicene

With the fast development of high-speed first principle calculation and more and more maturely experiment technology,graphene and graphene-like materials has become one of the most attractive subjects in the field of condensed matter physics,in particular,silicene was the hottest material in past five years.Silicene is a two-dimensional(2D)honeycomb-like lattice silicon analogue of graphene,compared with graphene,the band structure of the silicene is similar to that of graphene;the ? bonding and ?*antibonding energy bands near the Fermi level in the Brillouin zone have linearly across shape,which is the special structure of the Dirac cone.For these reasons,free-standing silicene has some interesting electron spin properties,such as nontrivial topological characteristics,quantum spin-hall effect,and electrically tunable band gaps.In this paper,I research the vacancy-defect scattering in Ag(111)-supported silicene interface with analytical simulation and some other simulations and draw the most attention on the Ag(111)-supported silicene interface structure effect on the mobility around the interface.What's more,the Ag(111)-supported silicene sheet will show some vacancies on its surface inevitably,based on this factor,I simulated the mobility around the Ag(111)-supported silicene interface,with different simulation settings,the mobility changed from 102 to 105 cm2/V s,which coincident with some first-principle calculations and experiments results,at the same time,my simulation results prove that there is a decay relation between mobility around the interface and vacancy-defect on silicene sheet surface,furthermore,the simulation results also indicated the interface structure is one of the unavoidable factors.The simulation methods in this paper provide a helpful and meaningful research direction of predicting the mobility for other graphene-like materials.