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Heat Dissipation Analysis And Technology Preparation Of Semiconductor Micro-cavity Laser Array

Posted on:2021-03-24Degree:MasterType:Thesis
Country:ChinaCandidate:J H YangFull Text:PDF
GTID:2370330611996416Subject:Electronic Science and Technology
Abstract/Summary:PDF Full Text Request
Semiconductor micro-cavity laser has a very broad application prospect in many fields,such as optical interconnection,optical communication,gas detection and so on,because of its characteristics of low threshold,high quality factor,high integration and simple geometry.Among them,all-optical network and high-speed communication system put forward new demand for parallel optical output of semiconductor laser.In this paper,we take the echo wall mode quantum cascade semiconductor micro-cavity laser as the research object,and explore the line and array structure which can obtain high power and high parallel optical output,and improve the output power level of the device effectively.Firstly,the basic theory of whispering gallery mode quantum cascade micro-cavity laser is expounded.A simulation of the optical output of In Ga As/In Al As quantum cascade semiconductor laser shows that the worm-shaped micro-cavity with a deformation factor of 0.42 has good directional output characteristics.Based on the directional output of the unit laser,a kind of dislocation array structure of semiconductor micro-cavity laser is designed,which can improve the density of the unit.Secondly,the thermal characteristics of semiconductor lasers and the basic theory of device heat transfer are analyzed,and the temperature distribution of 1×3 linear and new dislocation arrays of semiconductor micro-cavity lasers with radius of100?m is simulated by ANSYS finite element analysis software.the simulation results show that when the line column period is 550?m,the thermal series disturbance behavior of the 1×3 line device is obviously improved;when the dislocation array distribution has a transverse spacing of 550?m a longitudinal spacing of 280?m,the device temperature field distribution has no obvious superposition.Then,the key fabrication process of semiconductor micro-cavity laser was studied,and the conditional parameters of such processes as lithography,etching,ohmic contact and welding encapsulation were optimized.the semiconductor micro-cavity laser 1×3 linear,novel dislocation array was successfully prepared.Finally,the far-field test results of the worm-shaped semiconductor micro-cavity laser show that the device has good directional output characteristics.The output power of 1×3 linear series and new dislocation array 1×3 worm linear quantum cascade semiconductor micro-cavity laser is 33.3m W,the peak output power of new dislocation array is 51.2m W.Achieve the goal of efficient semiconductor micro-cavity laser output power.
Keywords/Search Tags:semiconductor micro-cavity laser array, heat dissipation, semiconductor laser preparation process, ANSYS thermal analysis
PDF Full Text Request
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