Preparation And Physical Properties Study Of ZnGaO Transparent Oxide Semiconductor Thin Film By Pulsed Laser Deposition

As a direct wide-bandgap semiconductor material,ZnO is widely used in optoelectronic fields,such as gas sensors,light-emitting devices,liquid crystal displays and solar cells.ZnO is considered to be the most promising transparent conductive semiconductor to replace expensive and toxic tin-doped indium oxide?ITO?due to its thermal stability,rich resources and non-toxicity.Because the conductivity of intrinsic ZnO is relatively poor,many researchers commonly use Al,In,Ga and other Group III elements to dope ZnO.Among them,Al-doped ZnO technology is relatively mature,and ZnAlO materials have been widely used in many optoelectronic fields.Compared with Al-doped ZnO thin films,ZnGaO thin films have stronger stability,smaller lattice deformation and stronger oxidation resistance,and the electrical properties are much improved compared with ZnO.However,there are few reports on the research of ZnGaO thin films.It is of great significance to systematically study and get the best preparation parameters to manufacture ZnGaO thin films with excellent photoelectric properties.Based on the first principle of quantum mechanics,this paper systematically simulated and calculated ZnO and Zn_0.9Ga_0.1O materials.The Zn_0.9Ga_0.1O ceramics were prepared by solid state sintering method.The Nd:YAG laser was used as the laser source.The Zn_0.9Ga_0.1O semiconductor films were fabricated on three different substrates of sapphire,quartz and glass by pulsed laser deposition.In the experiment process,we used the control variable method to change the oxygen pressure and substrate temperature while other experimental parameters and conditions were constant to obtain different Zn_0.9Ga_0.1O film samples.The characterization and analysis of structural properties,optical properties and electrical properties were carried out for multiple sets of samples.Compared and analyzed the multi-group samples to investigate the effects of different oxygen pressure and substrate temperature on the properties of the films,and then the optimal preparation parameters were explored.The main research contents of this paper are as follows:1.Calculated the energy band structure and state density of the ideal ZnO,and simulated the electronic structure,optical properties and XRD of the Zn_0.9Ga_0.1O material based on the first principle.Theoretically,the results of detailed analysis and calculation of Zn_0.9Ga_0.1O materials will bring out the foundation for the smooth progress of the experiment.2.The Zn_0.9Ga_0.1O ceramic targets were prepared by solid state reaction sintering method,and the targets were characterized and analyzed by phase,photoluminescence and Raman spectroscopy.3.Zn_0.9Ga_0.1O thin films were prepared that the different substrates of sapphire,quartz,glass and Zn_0.9Ga_0.1O ceramic targets were used in changing experimental parameters such as oxygen pressure and substrate temperature by pulsed laser deposition technique.4.The structure,optical and electrical properties of the films were tested and analyzed by means of X-ray diffractometer,atomic force microscopy,spectrophotometer,photoluminescence and Hall effect.The comparative analysis of the test results intuitively performed the best experimental parameters.Compared the test results,it is found that the film has the highest visible light transmittance when the oxygen pressure was 5 Pa at room temperature.Under the condition of oxygen pressure of 5 Pa,the electrical properties of the film are best when the substrate temperature was 700?.