Optical Properties Of Thin Films On Transition Metal Ion Doped Chalcogenide Glasses

Chalcogenide glasses refer to the glass formed by the introduction of S,Se and Te in the element periodic table VIA and the introduction of a certain amount of other metal elements.Doping modification is one of the important directions in the study of chalcogenide glasses nanomaterials.In recent years,the doping of transition metal ions in chalcogenide glasses has attracted widespread attention.Doping transition metal ions can adjust the emission area of chalcogenide glass and improve the fluorescence efficiency.The doping concentration determines the distribution,absorption,excitation,emission and structural properties of the particles.The ZnS/ZnSe eutectic material has excellent mechanical properties,high emission cross section and room temperature wide band gap tuning characteristics.The near infrared laser produced by transition metal ion doped chalcogenide glass nonlinear optical materials can be used to track air pollution and harmful substances,as well as new optical fiber fabrication,low loss,so the high stability transparent chalcogenide materials preparation and research of infrared properties are one of the hot research at home and abroad at present.The chalcogenide glass has been studied for decades on the physical properties of the high nonlinear refractive index,low phonon energy,diverse photosensitivity,excellent penetration in the infrared characteristics.So,the chalcogenide material has been widely concerned and studied in the aspects of phase change storage,solar cells,sensors and photoelectric devices.In this paper,ZnS:Co/ ZnSe:Co blocks of different components were made by solid phase reaction sintering.The films with high purity and uniform size were prepared by pulsed laser ablation.The nanocrystalline thin films of transition metal ions doped to blende chalcogenides were prepared in the pulse laser deposition by the third harmonic of Nd:YAG laser.The effects of preparation conditions on the structure and optical properties were analyzed,and the best component structure performance combination was obtained.A lot of physical parameters and conditions need to be controlled during the preparation of ZnS:Co and ZnSe:Co thin films by pulsed laser deposition.The change of each parameter will affect the final structure properties of the films.In order to get the best condition of thin film preparation,we will control one of the parameters when the other variables remain unchanged,and then compare and analyze the results,so we can get the best parameter condition of the thin film preparation.In this experiment,the influence of the pressure of the cavity and the substrate temperature on the formation of the ZnS:Co film and the ZnSe:Co film are investigated.At present,materials for infrared regions are rarely reported and far from meeting the needs of people.Therefore,the study of ZnS:Co thin films and ZnSe:Co films is very important.In the end,the transmission spectra,structural properties and electrical properties of the films were theoretically and experimentally investigated,and the optimum film forming conditions were obtained.The main work is 4 aspects as following:1.ZnS:Co targets and ZnSe:Co targets were prepared by solid-phase reaction sintering.2.ZnS:Co target and the ZnSe:Co target are tested and analyzed.3.ZnS:Co films and ZnSe:Co films were prepared by pulse laser deposition by controlling the change of parameters.4.ZnS:Co film and ZnSe:Co film were detected and analyzed.