Electrically Injected Correlated-Photon-Pair Sources Based On Semiconductor Bragg-Reflection Waveguides:Theoretical Studies

Correlated photon pairs are important resources in quantum-photonic information processing.They are used in quantum-key distribution,quantum metrology,and quantum simulation.Nowadays,quantum information technologies require miniaturization and integration of devices.In consequence,electrically-injected correlated-photon-pair source are needed.Semiconductor Bragg-reflection waveguides correlated-photon-pair sources use the gain characteristics and optical nonlinear characteristics of semiconductor materials;they integrate a quantum well laser and a Bragg-reflection-waveguide in one device.This type of device structure can realize electrically injected correlatedphoton-pair source.So far,electrically-injected photon-pair sources worked at 1.3 ?m telecom band have never been reported.In this thesis,we present our design and simulations of an electrically-injected semiconductor Bragg-reflection waveguides correlated-photonpair sources,emitting photon pairs near 1.3 ?m.At the same time,we establish a model to simulate the major characteristics of the source.We simulate the gain characteristics of the Bragg-reflection-waveguide quantum well laser using the k·p method and Luttinger-Kohn Hamiltonian,including energy band structure,density of states,dipole moment,gain spectrum,mode distribution,and optical I-L characteristics.In addition,we study the dispersion characteristics and obtain the tuning curves for phase matching.We then calculate the spectral density of the down-converted photon pairs and the generated photon-pair rate.We analyze the effect of facet reflectivity on the visibility of Hong-Ou-Mandel(HOM)interference.Then,we design a facet Bragg reflector to enhance the transmissivity of down converted-photons and increase the reflectivity of pump photons.Therefore,the HOM interference visibility is improved,while the threshold current of the device is reduced.