Synthesis And Optoelectronic Properties Of Single-crystalline GaInAsSb Quaternary Alloy Nanowires

?-? semiconductors have small band gap,high carrer mobility,large Bohr exciton radius,high photoelectric conversion efficiency,and strong radiation resistance.Among them,GaSb with a room-temperature bandgap value of 0.726 eV and InAs with a bandgap value of 0.354 eV have the highest hole mobility and ultra-high electron mobility,respectively.The quaternary alloy GaInAsSb based on these two kinds of semiconductor materials is a narrow bandgap direct bandgap semiconductor,which works in the near-middle infrared range,making it important role in the fields of the light emitting diodes,laser diodes,and photodetectors.Recently,Quaternary Ga_1-xIn_xAs_ySb_1-y-y alloys have usually been grown by liquid phase epitaxy?LPE?,organometallic vapor phase epitaxy?MOVPE?,molecular beam epitaxy?MBE?,and metal-organic chemical-vapor-deposition?MOCVD?.For the preparation of GaInAsSb quaternary alloy nanowires,there is challenge to obtain the GaInAsSb nanowires with compositions in the miscibility gap through LPE or other thermodynamic equilibrium methods.Although,the non-equilibrium growth techniques,such as MBE and MOCVD,can effectively overcome this difficulty,the above growth strategies usually cost high and the preparation process is complicated.In this work,GaSb and GaInAsSb quaternary alloyed nanowires were synthesized via a simple CVD method,which is a cheaper method and easy to operate.The mainly content of this paper deplayed as follows:1,High-quality GaSb nanowires were synthesized by a chemical vapor deposition.The prepared nanowires are cubic sphalerite structure with excellent crystallinity.The photoluminescence spectra displayed that the photoluminescence of the GaSb nanowires mainly comes from the direct transition of the bandgap.We also fabricated the GaSb nanowire transistor by the electron beam exposure.It can be seen from the electrical test that the photocurrent of the GaSb nanowire decreases with increasing back-gate voltage,showing the characteristics of the p-type semiconductor material.2,Combined with VLS growth method,atomic restructuring and ion exchange mechanism,we synthesized GaInAsSb quaternary alloy nanowires via a chemical-vapor-deposition method,which overcame the miscibility gap of quaternary alloys to a certain extent,and provide a new opportunity to ultra-wide spectrum infrared detection.Both the material characterization and the spectrum test show that the nanowires are belong to the cubic sphalerite structure with good crystallinity.and h an alloying element suitable proportion.A near-infrared photodetector operating at room temperature was fabricated,and the photo-electric response of the detector under different powers of near-infrared laser?980 nm?was tested.The prepared GaInAsSb quaternary alloy nanowires have higher external quantum efficiency and light responsivity than the previously reported GaInAsSb film detector.