Controlled Growth And Device Application Of Two Dimensional Rhenium Disulfide Crystal

Rhenium disulfide?ReS₂?is a two-dimensional?2D?group VII transition metal dichalcogenide?TMD?.It is widely concerned with the structural and vibrational anisotropy,layer-independent electrical and optical properties,and metal-free magnetism properties.Metal induced nucleation is adopted to achieve the growth of ReS₂ flowers at controlled locations.Ordered arrays of ReS₂ flowers has successfully been fabricated on SiO₂ substrates by using the patterned Pt/Ti dots as the nucleation sites and NH₄ReO₄ and S powder as the precursors.By change the metal arrays,the mechanism of the growth of ReS₂ flowers at controlled locations has been explored.Meanwhile,using this approach a large-area and high-quality ReS₂ flower was successfully prepared on SiO₂ substrate with metal films.In addition,a high crystalline,regular appearance ReS₂ crystal was successfully synthesis by change the quality of precursors and the morphology was triangle and quadrilateral.Using the characterization method of transmission electron microscopy,the a and b axis of the triangle ReS₂ crystal were determined.It is found that the a and b axis of the material was parallel with the two different sides of the triangle ReS₂crystal.Therefore,we explored a simple method to determine the a and b axis of triangle ReS₂,without any damage to the material.Based on CVD growth ReS₂crystal,a field effect transistor?FET?was fabricated and the electron mobility of the ReS₂ was 8.16 cm² V^-1 s^-1,the on/off ratio is up to 10⁵.