Study On The Controllable Synthesis Of Two-dimensional Material Rhenium Disulfide

Rhenium disulfide(ReS2)has attracted widespread attention due to its in-plane anisotropy and the feature that it is still a direct band-gap semiconductor from bulk to monolayer.However,the size of ReS2 prepared by the top-down method is small and the material is not uniform.Therefore,how to use the bottom-up method,that is,chemical vapor deposition,to synthesize ReS2 of large size and high quality is an urgent problem to be solved.This thesis mainly focuses on the controllable preparation of ReS2.The large-size and high-quality ReS2 is synthesized by chemical vapor deposition with the assist of Tellurium.The main research is as follows:1.We improve the experimental process.Based on the principle of Rhenium-Tellurium eutectic,adding Tellurium powder in the reaction reduces the high melting point of Rhenium powder,reduces the experimental requirements,and improves the growth efficiency.At the same time,this program doesn’t produce by-products,which is less harmful to people and reduces the difficulty of the experiment.2.A single layer of ReS2 was grown on a mica substrate using a Tellurium-assisted CVD method,and the best-grown ReS2 was characterized.The results of optical microscopy and scanning electron microscopy show that the grown ReS2 is jagged and the size was up to 20 μm,which is larger than the data in other literatures.The results of the spectrometer,Raman spectroscopy and photoluminescence spectroscopy confirm that the sample was indeed ReS2,and there were no tellurium and impurity residues,indicating that the sample quality is high.3.By controlling the substrate type,Rhenium-Tellurium weight ratio,reaction temperature and other parameters,the effects of different preparation conditions on the growth of ReS2 were studied.The optimum growth conditions for the synthesis of large-sized,high-quality ReS2 using CVD were also explored.Figure 52,table 3,references 32.