Optimized Design Of Growth Technology Of P Type Epitaxial Material

At present,silicon epitaxial materials as the largest electronic functional materials,is the foundation and core of integrated circuit manufacturing,supporting the sustainable development of the information industry and the microelectronics industry.Among them,P-type epitaxial materials are widely used in super-large-scale integration and discrete devices,is the preparation of a variety of devices based on the key material,a direct impact on the performance of the device.However,in terms of surface quality,consistency and other core technologies,there is a big gap between domestic P-type epitaxial materials and foreign countries,and their production capacity can not fully meet the needs of domestic device manufacturers.Therefore,how to improve the electrical parameters of the P-type epitaxial material through the adjustment of the equipment and the optimization of the process to improve the productivity has become an important issue.In this paper;the application of P-type epitaxial material is discussed in detail.The manufacturing process of silicon epitaxial wafer is analyzed.The vapor phase epitaxial equipment and its control are discussed.The principle and test method of the production process are studied.The influence of the uniformity of resistivity and thickness,and surface quality of the key factors,found that temperature field and airflow of the cavity have a very great effect on the distribution of electrical parameters.It is possible to optimize the epitaxial material growth process by adjusting the key technologies such as equipment coil,gas corrosion process,growth purity,variable flow blowout process and changing bake time to improve the uniform distribution of the cavity temperature field,effectively inhibit the self-doping effect and improve the uniformity of the electrical parameters of the epitaxial wafers,while the surface quality control is good,the production efficiency has also been improved.The P-type epitaxial material prepared by this method has less than 5%resistivity non-uniformity(central point and 6mm from edge total 5 points),less than 3%thickness non-uniformity(central point and 6mm from edge total 5 points),good surface quality,capacity increase of about 10%.The process of this paper has been successfully applied in the preparation of P-type epitaxial materials,both quality and productivity have been very good to enhance and improve economic efficiency.