Surface Modification And Properties Of GaAs-based Nanostructure

In this paper,we focuses on the surface preperties and surface modification of the GaAs-based nanostructures.The two methods of sulfur passivation and surface preparation of Sb₂S₃ nanoparticles have been used for surface modification of the-GaAs based nanostructures,which effectively decrease the surface state density and increase the photoluminscence?PL?intensity of the GaAs-based nanostructures.The optical properties was investigated by using PL.The emission mechanism was discussed through performing and analyzing the temperature dependent and excitation power dependent PL.Providing basic materials and technical support for GaAs based nanostructured semiconductor lasers The primary content of the paper is as follows:?1?GaAs films was passivated with?NH₄?₂S solution.The PL intensity of GaAs after sulfur passivated for 25 min,which increased by a factor of 14 at room temperature.And the sulfur passivation does not changed the emission mechanism of GaAs films.With the temperature dependent and excitation power dependent PL,1.492eV can be assigned as band to accept?B-A?,1.512eV can be assigned as free exciton?FE?.?2?The growth of Sb₂S₃ nanoparticles on the surface of GaAs films by chemical bath deposition?CBD?.The band gap energy of Sb₂S₃ nanoparticles was 1.65eV by UV visible absorption spectroscopy.With the temperature dependent and excitation power dependent PL,discovery of a similar bound exciton?BE?at 1.481eV.However,the intensity of the PL was not significant,so the experiments were again performed on GaAs nanowires?3?GaAs nanowires were grown by molecular beam epitaxy?MBE?,and they were be observed by scanning electron microscopy?SEM?and PL.With the temperature dependent and excitation power dependent PL,confirmed the existence of bound exciton,and located at1.471eV.The binding energy will increased with the growth of Sb₂S₃ nanoparticles growth cycle,and the binding energy of the 20 cycle Sb₂S₃ nanoparticles can be 10meV.