Study Of The Preparation And Optoelectronic Applications For Doped Cu₃N Films

It has been studied the preparation of transition metal doped copper nitride and the application of photoelectric properties by the method of magnetron sputtering in this article.Firstly,the effects of thermal stability and optical properties of metal-doped copper nitride films were studied;it has been found that the thermal stability and optical bandgap of the films were effectively improved.Then,the applications for optoelectronic properties of copper nitride were further studied.It was found that the photoelectric response of the metal Mo-doped copper nitride films has been improved and the films could be applied to a new type of photodetector.Finally,the pure copper nitride and Mn-doped copper nitride films can be applied to lithium battery anode materials;besides,the stability of the devices have been improved.This article mainly includes the following three aspects:Firstly,at room temperature,the Sc-doped copper nitride films prepared by reactive magnetron sputtering are mainly grown along the(111)preferred orientation.The Sc doped Cu3 N films shows the smaller crystallite size and more dense film surface.The Sc-doped Cu3 N films were more thermal stable with the Sc doping concentration is 1.3 atoms percent than pure Cu3 N films.With the slightly increase of doping concentration of Sc atom,the bandgap of the films increased from 1.24 e V to 1.45 e V;but then bandgap of the films decreased to 1.16 e V with increasing the Sc atoms.It is indicated that Sc doped copper nitride films could change the crystal structure,thermal stability and optical properties of the films.Second,in order to investigate the applications in the photoelectric properties of copper nitride films,we successfully prepared the Mo-doped copper nitride films by DC and RF magnetron sputtering.The results show that pure copper nitride grown along the(111)preferred orientation with a typical anti-trioxide crystal structure.With the increasing the content of Mo atoms,the(111)peaks gradually weakened while the(100)peaks significantly enhanced;the surface morphology of the particles changed significantly;the optical band gap of copper nitride gradually reduced from 1.34 e V to 0.79 e V.The photocurrent response of the Mo-doped Cu3 N films are more stable,which reducing the response time.The fabricated device with doping of Mo demonstrated excellent visible light response and reveals the excellent potential of copper nitride films for application of visible light detectors.The pure and Mn-doped copper nitride films were deposited on the copper foil by using magnetron sputtering as a lithium ion battery anode material.We studied various applications of copper nitride in battery devices.Finally,we found that copper nitride as a negative electrode material for lithium ion batteries has good storage capacity and battery cycle stability.The XRD results show that high quality pure and Mn-doped copper nitride films can be grown on flexible substrate.The surface crystal morphology is mainly affected by the copper foil substrate.Compared with the pure copper nitride,Mo-doped copper nitride films as a negative electrode material for lithium-ion batteries have an excellent charge/discharge capacity performance.