Study On The Fabrication Of Semiconductor Optical Nanoarrays By Self-assembled Nanospheres Mask Method

With the rapid development of nanostructured material preparation technology,nanooptics technology has been widely concerned as an important light management method.When the size of the nanoparticles is smaller than the wavelength of the incident light,a kind of scattering resonance can be excited.This effect was first explained by the German scientist Gustav Mie.Therefore,it is also called Mie optical resonance.Silicon?Si?,gallium arsenide?GaAs?and other commonly used semiconductor materials are ideal materials for Mie resonance as the higher refractive index and lower extinction coefficient in the optical band of their work.The preparation process of semiconductor nanostructures is mature and easy to integrate with the device process.It has broad application prospects in the field of optoelectronic devices and becomes a research hotspot in recent years.As the shape,size,distribution and optical constants of nanostructures are all important parameters affecting their optical resonance characteristics.Therefore,how to accurately control these parameters in order to satisfy the requirements of practical applications is one of the main technical difficulty that needs to be solved.In view of the above problems,this article focuses on the in-depth research on the fabrication process and optical properties of the surface nanoarray structure of the commonly used semiconductor materials like Si and GaAs.The preparation process of the structure is mainly divided into three steps:Firstly,the modified St?ber method was used to synthesize monodisperse and uniform SiO₂ nanospheres with arbitrary size.During the experiment,the best synthesis time of nanospheres was 4h;Secondly,single layer mask of the SiO₂nanosphere was self-assembled.It was found that the optimal experimental parameters were low-rotate 400rmp for 10s and high-rotate 2500rmp for 10s by spin coating method to prepare the mask layer based on Si substrate with uniform distribution and large area.For GaAs substrates,it has been found that air/water interface assembly can be used to fabricate a closely-arranged mask layer with any area.The research of this process has hardly been reported in the past;Thirdly,the mask layer is used as a barrier layer for ICP etching.In this process,the factors affecting the aspect ratio and shape of the nanoarray structure were discovered;Finally,Si and GaAs nanoarray structures with precisely controlled shapes,sizes,and distributions were prepared.In addition,the optical properties of the structure were verified and its reflectance was found to be greatly reduced,thus laying a solid foundation for satisfy the needs of the optical resonance effect.