Analysis Of Photoelectric Properties Of Thin Film Gallium Arsenide Solar Cells Based On Light Trapping Nanostructures

Solar cell,which directly convert solar energy into electricity,offer a practical and sustainable solution to the challenge of meeting the increasing global energy demand.Benefiting from advances in semiconductor technology,the cost of solar cell power generation has reached a level that can compete with the prices of consumer power in many countries around the world.Further increasing the solar energy utilization rate can further increase the competitiveness of solar cel s.Firstly,the research background of thin film gallium arsenide solar cells were introduced,then the research status of light-trapping nanostructure and its preparation technologies were described,and finally the purpose and significance of this paper were represented.In this paper,COMSOL Multiphysics,which was based on the finite element method,was introduced to simulate metal nanostructures and dielectric nanostructures.The relevant mechanisms were explained accordingly through light management and carrier management,which laid the foundation for the future preparation and application of nanostructures.Secondly,light management and carrier management which based on wave equations and carrier transport equations were briefly introduced.Then COMSOL Multiphysics,which was based on the finite element method was described as well as its modeling steps,providing theoretical guidance for the next part.Furthermore,by introducing COMSOL Multiphysics,gallium arsenide solar cells with inclined silver spherical nanostructure and silicon nitride fishnet like nanostructure were devised.The geometrical parameters of the nanostructures were optimized by the grid scanning method,and the light trapping efficiency principle and influence were analyzed by light management and carrier management.Finally,a gallium arsenide thin film solar cell with a passivation layer of aluminum gallium arsenide was constructed using COMSOL Multiphysics.The effects of Si₃N₄ cone nanostructure and TiO₂ cone nanostructure and MgF₂-ZnS double-layer anti-reflection coating on the photoelectric properties of solar cell were studied.The mechanism of improved light trapping ability of the solar cells patterned with nanostructure was discussed accordingly.