Preparation And Properties Of Copper Indium Selenide Thin Films Based On Colloidal Ink Technology

The CuInSe₂?CISe?thin film solar cell has the advantages of excellent photoelectric properties,strong resistance to radiation stability,good low light and high photoelectric conversion efficiency,thin film solar cells in the field of typical representative.Traditional vacuum technology in the preparation of CISe film when there is a low raw material utilization,complex harsh vacuum process and high cost and other issues,limiting its large-scale industrial development.In recent years,non-vacuum colloidal ink technology is expected to significantly reduce production costs due to the simple process,the need for harsh vacuum conditions,high raw material utilization and the use of"roll to roll"technology,etc.,to achieve large-scale CuInSe₂-based thin-film solar cells Industrialization,has become the current research hot spots at home and abroad.In this paper,CuInS₂ nanocrystals with pure phase and stoichiometric ratio were prepared by low pressure and low cost triethylene glycol?TEG?as the reaction solvent.The effects of reducing agent type,implantation temperature and sulfur source on the phase,structure and properties of CuInS₂ nanocrystalline phase were studied.The CuInS₂ nanomaterials with spherical sphalerite structure and lamellar wurtzite structure was successfully prepared,which effectively controlled CuInS₂Size of nanocrystals.Then,a high quality CuInSe₂ thin film was successfully prepared by the colloidal ink technology,and the solar cell was assembled with the photoelectric conversion efficiency of 1.05%.The pure phase binary Cu-Se compound nanocrystals and In₂Se₃ nanocrystals were prepared by the thermal injection method using oleylamine as solvent.The effects of Cu/Se ratio Cu-Se binary crystal nanocrystalline phase and morphology were studied.Cu_0.87Se,CuSe and Cu_2-xSe nanocrystals were controlled and controlled.Cu_2-xSe and In₂Se₃ mixed nanocrystalline colloidal inks and nanoparticle precursor films were prepared.The effects of heat treatment and heat treatment temperature on the precursor film were studied.The CuInSe₂ films with pure phase and chalcopyrite structure were successfully prepared.The results show that the band gap is 1.08 eV,and the optical absorption performance is good.The carrier concentration is 5.463×10¹88 cm^-3,which is within the ideal range of preparation of high efficiency CISe film.