Research On The Fabrication And Testing Process Of Graphene-based Pressure Sensing Element

Graphene is a new type of two-dimensional nano-film material,which has been widely used in the manufacture of new MEMS devices.Graphene is extremely sensitive to external environment,the adsorption of impurities will greatly affect the quality of the graphene,improves the performance of the graphene micro-nano devices produce tens of times change,this performance instability in the practical application of MEMS devices is unacceptable.Effective isolation and protection of graphene with external environment is the key to improve the performance stability and practicability of graphene devices.Boron nitride is the same as hexagon lattice structure with graphene,and the lattice mismatch is only 1.8%,and the BN/Graphene/BN heterostructure is stable.The properties of boron nitride are stable,which can effectively block the pollution in the surrounding environment.Based on the above,this paper proposes to use two layers of boron nitride coated graphene to form heterogeneous structure,improve the electrical properties of graphene,and enhance the stability of graphene micro-nano devices.This paper study the boron nitride/graphene/boron nitride heterostructure sensitive mechanism and the preparation process,trial production of a graphene pressure sensitive element and testing sheet resistance of 1092?sq^-1,the sensitivity of 24.85?V/V/mmHg linear interval is 130 kpa to 170 kpa,hysteresis of 11.76%.Stability test experiment,uncovered boron nitride layer of graphene sensitive element 15.7%performance change within 7 days,covered with boron nitride layer of graphene sensitive element performancechangeofonly3.1%,theresultsshowthattheboron nitride/graphene/boron nitride heterostructure is applied in graphene micro-nano devices,is a feasible scheme of performance stability,to promote the practical significance of graphene class device.