Graphene/Diamond Heterostructure And Its Electrochemical Analysis

The graphene/diamond heterostructure combines the superior properties of diamond and graphene to provide superior performance over conventional films.In this paper,polished diamond is used as the solid carbon source and substrate,transition metal nickel and copper-nickel alloy are used as the catalytic layer,and graphene film is grown in situ on the diamond surface to prepare graphene/diamond heterostructure.The influence of the type and thickness of the catalytic layer in the growth preparation and various experimental parameters on the growth of high-quality graphene on the diamond substrate was investigated.The experimental results were analyzed using various characterization test instruments to obtain graphene/ The optimal parameters of the diamond heterostructure.In this experiment,it can be concluded that when the sample with metal Ni as the catalytic layer is grown by annealing at 1000 °C for 15 min,etching and cleaning can produce a graphene/diamond heterostructure with less layers and excellent electrical properties.A new attempt was also made to use a different ratio of copper-nickel alloy film as the catalyst layer.When the catalytic layer Cu/Ni=1:1,the alloy was annealed at 1000 °C for 15 min,and the quality was better.Graphene/diamond heterostructure.In addition,on the basis of successful preparation of single crystal,graphene/multiple was also prepared on the surface of polycrystalline diamond(ultrafine-grained nano-diamond)with copper-nickel alloy film as catalyst layer under optimal growth parameters.Crystal diamond heterostructure.The method for preparing a graphene/diamond heterostructure can effectively avoid the problems of ohmic contact difference,waste of pollution caused by transfer of conventional graphene to the diamond surface,and cannot be transferred to various shape surfaces(especially concave and convex surfaces)and Limitations such as patterning cannot be achieved.The use of an external carbon source is also avoided,which makes the interface stronger and has better electrical properties.In particular,its application in detectors can solve the defects of traditional detectors and greatly promote the development of domestic diamond detectors.