| In this thesis,the ITO thin film and Pt thin film were chosen as electrode materials of ceramic-metal thin film thermocouple based on the current progress of ceramic thin film thermocouple and our own laboratory equipment and experimental conditions,which will provide a possible temperature measurement technology for the development of the next generation ceramic engine.The effects of ion beam sputtering and annealing conditions on microstructure,electrical properties and stability of ITO films were studied.The influence of ion energy,ion beam and Ar pressure on ITO film deposition were studied by orthogonal experiments and the optimal ion beam sputtering condition of ITO film is:ion energy 900eV,ion beam80mA,Ar pressure 2.0×10-2Pa.The ITO films were annealed at different temperature?400?,600?,800?,1000??in air and N2,meanwhile the properties of ITO film were analysed.It is found that nitrogen heat treatment is better than air heat treatment to optimize the crystallization performance of ITO film and improve carrier mobility and enhance the conductivity of film.The thin film prepared in air reduces the conductivity sharply due to the sharp reduction of oxygen vacancy.The sputtering technology and conductive properties of In2O3 films were also studied.It was found that the resistivity of In2O3 film annealed at high temperature in air can achieve 113.382?.cm and the films are almost insulators.On the basis of optimizing ITO film sputtering process and heat treatment process,the structure,size and mask of ceramic thin film thermocouple and ITO micro resistance wire were designed respectively on Al2O3 ceramic substrate.In this paper,a non-silicon MEMS integrated manufacturing method was used to prepare ceramic thin film thermocouple for two different processes,and the advantages and disadvantages of the two preparation techniques were compared and analyzed.The thin film thermocouple high temperature static test platform was set up to test the thermoelectric output characteristics and high temperature stability of ceramic thermocouple devices.Result shows that the thermocouple prepared in nitrogen has better thermal stability,smaller drift rate than that in oxygen and the seebeck coefficient of both were 56.24?V/?and 65.42?V/?,respectively.Pt-ITO thin film thermocouple can withstand the high temperature of 1200?for 40h.ITO film has better resistance to high temperature performance than Pt film.Compared with as-deposited film and air-parpared film,the nitrogen-parpared film has better resistance to high temperature.Meanwhile,the dynamic testing platform of thin-film thermocouple was set up and the dynamic response characteristics of thin-film thermocouple was carried on.The time constant of TFTC was in the range of 40?s60?s. |
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