Preparation And Characterization Of Multicomponent PZT Piezoelectric Thin Films

In recent years,PZT thin films with components close to the quasi-homophase boundary have been used in various fields of MEMS technology.Improving the performance of PZT films is still a hot topic at present.In this paper,the modification method of PZT is studied.The specific contents are as follows:?1?Effect of Ti atoms on crystal orientation,dielectric properties,ferroelectric properties and fatigue resistance of PZT thin films.In this paper,the effect of Ti buffer layer on the properties of PZT thin films was studied at first.The Pt/Ti-buff/Pt/Ti/SiO₂/Si bottom electrode structure was sputtered on the surface-oxidized silicon wafer by a magnetron sputtering device,and the position of the Ti buffer layer was controlled by controlling the sputtering time to obtain bottom electrode.The PZT film was prepared by the sol-gel method and its properties were compared with the PZT prepared on the Pt/Ti/SiO₂/Si bottom electrode structure without the Ti buffer layer.Then the effect of Ti-Pt alloy electrode with different Ti contents on the properties of PZT thin film was studied.The Ti-Pt Alloy/Ti/SiO₂/Si bottom electrode was prepared by a magnetron sputtering apparatus,and the content of Ti atoms in the Ti-Pt alloy was adjusted by controlling the sputtering power of the Ti target.PZT film was prepared on the bottom electrode by sol-gel method and its properties were compared with properties of PZT prepared on a Pt/Ti/SiO₂/Si bottom electrode structure without the alloy.?2?Effect of cerium?Ce?doping on the crystal orientation and electrical properties of PZT thin films.In this paper,Ce-doped PCZT films with doping concentrations of 0.1%,0.5%,1%,2%and 3%were prepared by sol-gel method.The crystal orientation,dielectric property,microstructure,dielectric property,ferroelectric property,fatigue resistance and vibration property of the doped PZT thin films were compared with the undoped PZT thin films.?3?An inexpensive method for preparing PYN-PZT films.Put lead acetate trihydrate into the acetic acid solution with niobium oxalate to obtain the niobium acetate solution.The niobium acetate solution was used as the niobium source of PYN-PZT thin film,and yttrium nitrate was used as the yttrium source of PYN-PZT thin film.The crystal orientation,dielectric property,ferroelectric property and vibration property of the PYN-PZT film were compared with those of the PZT film.An inexpensive method for preparing PYN-PZT film is obtained.?4?The process of preparing PZT thick film by new sol-gel method.In this paper,PZT powder was obtained by heat treatment of PZT precursor solution.And lead acetate,zirconium nitrate pentahydrate and tetrabutyl titanate was used as lead source,zirconium source and titanium source of the PZT precursor solution.Mixed the PZT powder and PZT precursor solution to obtain PZT powder solution.A 5 micron thick PZT thick film was prepared by a spin coating process of 2 layers of PZT powder liquid+6 layers of PZT precursor liquid on the bottom electrode.?5?The piezoelectric microactuator using PZT thin film as the driving material was fabricated by MEMS technology,and its vibration performance was characterized.