Study On Irradiation Effect Of Single Crystal Silicon Solar Cells And Band Gap Adjustment Of SnSe₂

Aerospace technology has always been the highest embodiment of a country's scientific and technological level.The scientific development and rational use of space resources has always been the pursuit of all countries.Researches in this area require a variety of sophisticated technologies to work together.One of the most important aspects is the study of the operational stability and reliability of spacecraft,including the study of the reliability of solar cells.In this thesis,different doses of ⁶⁰Co?ray irradiation experiments were carried out on single crystal silicon solar cells to measure changes of solar cell performance parameters such as open circuit voltage,short circuit current density,maximum operating power,fill factor and the most important parameters which is photoelectric conversion efficiency before and after irradiation,etc.The decay rate was calculated.By comparing the decay rate with different doses of ⁶⁰Co?ray irradiation.The influence of irradiation conditions on the performance of solar cells can be found.It is found that the decay rate of each parameter increases with the increase of irradiation dose.The decay rate of open circuit voltage and short circuit current density increased from 1%to 5%when irradiation dose was increased.The decay rate of fill factor and photoelectric conversion efficiency increased from 15%to40%when irradiation dose was increased.Each parameter had different decay degree in different dose.The open circuit voltage and short current density showed slight linear decay trend.The filling factor and photoelectric conversion efficiency showed a certain linear decline trend when the range of irradiation dose was 5 kGy-25 kGy.When the dose was higher than 25 kGy,the decay trend of filling factor and photoelectric conversion efficiency increased.Besides,the irradiated solar cells in 5kGy,15 kGy and 20 kGy was annealed.It turned out that each parameter was recovered.The cell irradiated by?ray which the dose is 5 kGy was recovered to the Initial condition.The cells irradiated by?ray which the dose was 15 kGy and 20 kGy had the same pattern.In addition,the experiment of 1 MeV electron irradiation with single-crystal silicon solar cell was carried out.The doses were 1 kGy and 5 kGy,and the changes of the above parameters and the decay rate of the solar cell were also analyzed to find the effect of dose of electron irradiation on the performance of solar cells.Besides,simulation software for particle incidence such as SRIM and Casino were used.The interaction between particles and solar cell materials was analyzed theoretically.It was found that the decay rate increased as the irradiation dose increased and the decay degree of each parameter was more obvious than?ray.The electron irradiation at the dose of 5 kGy resulted in a severe decay of the filling factor and efficiency around 40%.The simulation showed that when electrons inject the material,particle trajectories scatter throughout the cell and causing defects.Furthermore,The band gap adjustment of SnSe₂ were studied in this thesis.Firstly,The SnSe₂film were grown on glass substrates by two-step method?magnetron sputtering+selenization?,By setting different selenization temperatures,The effect of selenization temperature on the optical band gap of the thin film were studied.The optical transmittance and optical band gap of the films were obtained at different selenization temperatures.When the selenization temperature was 350?and selenization time was 40 min The thin film has the best transmittance curve,which the optical band gap is 1.46 eV,It is the most suitable for the solar spectrum absorption,The higher temperature and shortage of selenization time lead to appearance of SnSe phase in the process of selenization,The band gap is around 1.7 eV.XRD,XPS and Raman spectra were used to characterize the film,Results showed that the microstructure and phase structure was the best which the selenization temperature was 350?and selenization time was 40 min.So the optical band gap is the most ideal.The optical transmittance and optical band gap of the films were compared before and after annealing with hydrogen.After annealing at low temperature in hydrogen environment,SnSe₂ is partially reduced to SnSe in the film,resulting in increased transmittance and larger optical band gap.The results showed that selenization temperature and selenization time have an effect on the optical band gap,so was the hydrogen annealing...