Preparation And Photoelectrical Properties Study Of Aluminum-Gallium Oxide Thin Films

Recently,(Al_xGa_1-x)₂O₃,as a“super-wide”bandgap semiconductor,has benn regarded as a candidate in the field of high performance devices owing to its excellent physical and chemical stability and excellent photoelectric properties.In this paper,(Al_xGa_1-x)₂O₃ thin films were fabricated by radio frequency magnetron sputtering using metal Al/Ga₂O₃ target and Al₂O₃/Ga₂O₃ target.The effects of preparation technology on the properties of(Al_xGa_1-x)₂O₃ film have been studied in detail.The interdigitated electrodes array has made on(Al_xGa_1-x)₂O₃ thin films to fabricate MSM UV photodetector and the performance of the detector was analyzed.The main research work of this paper is as follows:?1?The(Al_xGa_1-x)₂O₃ thin films were deposited on sapphire?0001?substrate using metal Al/Ga₂O₃ target,the effect of a series of process parameters including sputtering power,work pressure and annealing temperature on microscopic crystalline structure and photoelectric properties of(Al_xGa_1-x)₂O₃ thin films were study in detail.Analysis of crystal structure,crystal orientation,morphology,grain size,optical transmission of thin films were obtained by several characterization methods including XRD,SEM,UV-Vis,Raman Spectra and XPS.Optimized parameters of(Al_xGa_1-x)₂O₃ films with good quality is:sputtering power 140 W,working pressure1.2 Pa,oxygen to argon ratio 0:38,growth sputtering time 120 min,post annealing temperature 900°C,and annealing time 120 min.?2?The(Al_xGa_1-x)₂O₃ thin films were deposited on sapphire?0001?substrate using Al₂O₃/Ga₂O₃ target,the effect of a series of process parameters including sputtering power,work pressure and annealing temperature on microscopic crystalline structure and photoelectric properties of(Al_xGa_1-x)₂O₃ thin films were study in detail.Analysis of crystal structure,crystal orientation,morphology,grain size,optical transmission of thin films were obtained by several characterization methods including XRD,SEM,UV-Vis,Raman Spectra and XPS.Optimized parameters of(Al_xGa_1-x)₂O₃ films with good quality is:sputtering power 120 W,working pressure1.6 Pa,oxygen to argon ratio 8:38,growth sputtering time 120 min,post annealing temperature 900°C,and annealing time 120 min.?3?MSM structural solar-blind detector was fabricated by preparation of the interdigitated electrode on the(Al_xGa_1-x)₂O₃ thin film using standard photolithography and lift-off techniques.At 50 V bias,the photodetector based on(Al_xGa_1-x)₂O₃ thin film using Al₂O₃/Ga₂O₃ target annealed in Ar atmosphere exhibits a spectral response of 47 mA/W at a wavelength of 47 mA/W.Both amorphous(Al_xGa_1-x)₂O₃ dector and(Al_xGa_1-x)₂O₃ dector annealing in Air shown no resposivity.At 50 V bias,(Al_xGa_1-x)₂O₃ dector grown at higher sputtering power using metal Al/Ga₂O₃ target exhibits a spectral response of 0.7 A/W at 222 nm wavelength.At the same time,(Al_xGa_1-x)₂O₃ dector grown by Al₂O₃/Ga₂O₃ target exhibits a spectral response of 0.65A/W at 224 nm wavelength.