A Research Of Memristive Crossbar Based On LinbO₃ Single Crystal Thin Film

In recent years,due to its unique electrical properties,the memristor has a good application prospect in memory and neural networks.In order to achieve large-scale storage and more complex functions,large-scale integration of memristive units is indispensable.Memristors are widely used because of their simple two-terminal structure,which can easily achieve high-density integration by crossbar construction.But there is a problem of non-uniformity in parameters between the various units.The reason comes from the grain boundaries and various defects existing in the film.Therefore,this paper uses a method to prepare a complete single crystal film.Attempt to improve non-uniformity issues between individual cells.In this paper,ion implantation and stripping technology combined with BCB bonding is used to realize the stripping and transfer of the electrode-coated film.It is desirable to use this film preparation method to obtain a single-crystal film with few defects,in order to solve the problem of uniformity of the film.Firstly,the ion distribution and defect distribution in the film after injection were observed by software simulation,and the appropriate annealing curve was determined by referring to the BCB glue curing curve and the quality of the peeling film obtained by the experiment,After this a memristive crossbar having better properties is prepared by a post-treatment process.The specific research work and results are as follows:1.The bonding and stripping method of electrode-coated film based on BCB glue was studied by ion implantation stripping method.The optimization method of memristive performance was studied by Ar⁺irradiation.Firstly,the difference between H⁺and He⁺implantation was observed by software simulation.The dose of He⁺implantation was determined with reference to the peeling transfer result of Si single crystal.The results of different implant doses at the same temperatures were compared.The results shows that the bigger the implantation dose,the smaller the peeling temperature required,and the easier peeling,On the other hand,in order to realize the surface bonding with electrode structure,the method of spin-coating BCB glue was selected.The pretreatment conditions of different BCB glues including the thickness of BCB glue and the influence of pre-baking time on the peeling film were experimented.The thickness of the BCB glue at a rotational speed of 5000 r/min and the pre-bake time in 60s can obtain a single crystal film which having less cracks.By Ar⁺irradiation,oxygen vacancies are introduced into the film,and the film thickness is reduced to 100nm by etching thinning process,and finally a performance-optimized memristive film is obtained.2.In the preparation process of the above memristive film,a cross-array based on the above-mentioned memristive film was fabricated by photolithographic deposition of patterned electrodes,the data retention characteristics and endurance characteristics,of each unit in the array were tested.The test results show that the resistance of the device can be stably maintained for more than 50 hours,and has a switching ratio of more than 10 times after 10,000 cycles.The results of multi-state characteristics test shows that the device exhibits multi-state with the amplitude of the pulse.Finally,the statistical analysis of the electrical characteristics of all the cells shows that the electrical forming voltage and the high resistance state show high consistency,and the current of low resistance state can be kept within 1×10^-8A¹×10^-7A.