Preparation Of Novel Degradable Materials And Study On Transient Resistive Memory Devices

Transient electronic devices,have inspired great research interest and attention due to the wide application prospects in biomedical devices,secure memory devices and environmental sensor,which totally subverted the concept of traditional electronic devices.As the transient electronic devices represent one novel class of electronical property that can physically and/or functionally disappear in part or in whole when they are subjected to certain trigger.In recent years,the study of transient electronic technology has stimulated the rapid development of various types of electronic devices.Transient electronic devices play an indispensable role in modern disposable electronics and create potential application fields that cannot be addressed with conventional electronic devices or systems.The transient technology,however,is still in its inital stage.Therefore;it is valuable to study the transient materials and devices in biomedical,military and security intelligence applications.However,the choice of transient materials has some limitations.It is therefore of great significance to explore transient electrodes,materials,and substrates that can undergo rapid and complete degradation based on different demands.In this work,the CsPbBr₃ thin films as the switching layer are utilized to implement transient memory devices with a flexible Ag/CsPbBr₃/PEDOT:PSS/ITO structure due to the humidity instability of the material.This flexible non-volatile memory device exhibits reproducible resistive switching performance,uniform switching voltages,concentrated distributions of high and low resistance states and good mechanical stability over 50 bending times.The elemental mapping images of the memory device reveal that the resistive switching mechanism is interpreted through electrochemical formation/dissolution of metallic Ag filaments in CsPbBr₃ layer.More importantly,we demonstrate that the CsPbBr₃ films and memory device can be dissolved rapidly in deionized water within 60 s,showing the transient characteristics.In addition,the optical and electrical properties disappear completely after the device dissolved in deionized water.The all-inorganic perovskite CsPbBr₃-based transient memory devices have great potential for applications in secure data storage systems and disposable electronics.The devices based on perovskite materials have novel materials and simple structures.However,the instability and small window of the perovskite material are not great enough for the application of the device.Meanwhile,the material contains poisonous lead,which is not conducive to the biomedical application of the transient electronic devices.In order to explore the application and operability of the transient resistive devices,we have selected biological proteins for further research.Biomaterials have attracted attention as a useful structure component for biodegradable and transient electronics due to their solution processability,biocompatible and bioresorbable properties.In this work,we report the thin films of biocompatible keratin from human hair as solid electrolyte layer for resistive switching memory device,with great electrical performance,high transmittance,and physically transient property.This non-volatile memory device exhibits reproducible resistive switching performance,uniform switching voltages,and concentrated distributions of high/low resistance states.The resistive switching mechanism in our memory device is described via the electrochemical formation/rupture of the Ag metallic filament in keratin layer.In addition,the keratin thin films can be dissolved in deionized water within 30 minutes,presenting the potentially biodegradable and physically transient characteristics of the memory devices.The biocompatible memory devices play environmental friendly,sustainable and low cost roles as the promising candidate for memory applications.Finally,this thesis points out the advantages of transient resistive memory devices compared to traditional resistive electronic devices,and looks forward to the further optimization of materials and devices,and the possibility of subsequent development.