Development Of Novel Transient Resistive Memory Devices Based On UV Degradable Materials

With the rapid development of information technology,electronic devices have been widely used in many fields such as biomedical,information and communication,etc.However,a large number of electronic devices are discarded after damage or elimination,which not only causes serious electronic waste pollution,but also leads to potential security problems such as leakage of information stored in devices.To solve this problem,there is an urgent need to develop transient electronic technology based on degradable,controlled trigger and non-toxic materials;on the other hand,memory is the core carrier of electronic information in this era,resistive memory(RRAM)as a non-volatile information memory devices,because of its simple structure,low power consumption,high storage density,fast read and write speed and other advantages have become the next generation of information memory devices research It has become a hot spot for research on next-generation information memory devices because of its simple structure,power consumption,high storage density,and fast read/write speed.In view of this,combining transient electronics with resistive memory,designing and preparing transient resistive memory based on degradable materials is of great significance for secure information storage and environmental protection.However,most of the current degradable materials are dissolved in deionized water,which are susceptible to air humidity and uncontrollable triggering conditions.Therefore,in this thesis,the research of new transient resistive memory is carried out around UV degradable materials with controllable triggering to realize the development of green and information security memory devices.In this work,based on the fast response of cyclic polyphthalaldehyde(cPPA)to spontaneous depolymerization into monomeric phthalaldehyde(oPA)under acid triggering,polymeric cPPA materials with high ring purity were synthesized by cationic polymerization,and the ring structure of cPPA was verified by nuclear magnetic resonance hydrogen spectroscopy(~1H NMR).The rapid depolymerization of cPPA can be triggered by the decomposition of acid under UV light by the photoacid generator MBTT,and the photo-radiative transient substrate(thickness ofμm level)was prepared by solution casting and constant temperature and negative pressure process of cPPA and MBTT,which can be rapidly depolymerized under UV light radiation within 15 min,showing excellent degradation characteristics;meanwhile,the photo-radiative transient substrate was prepared by magnetron sputtering technique on the Meanwhile,the transient resistors were prepared by depositing Mg fork finger electrodes on the photo-radiative transient substrate by magnetron sputtering,and the devices could operate stably without UV radiation and degrade and functionally fail within 25 min under UV radiation,demonstrating the feasibility of constructing transient electronic devices based on photo-radiative transient substrates.Importantly,the feasibility of UV degradation of cPPA/MBTT was verified,providing an application example for the subsequent degradation of transient resistive memories.Based on the above work,based on the feasibility of UV degradation of cPPA/MBTT,a new transient resistive memory device with Cu/cPPA/ITO structure is prepared by magnetron sputtering technique by preparing a photo-emitting transient film(thickness at nm level)of cPPA and MBTT as the resistive dielectric layer of the device through solution casting and spin coating processes.This non-volatile memory device exhibits stable bipolar resistive characteristics,with a set voltage～0.8 V,a reset voltage～-0.8 V,a high-to-low resistance ratio～10~2,50 cycles,and a data retention time of more than 3600 s.The resistive phenomenon of the Cu/cPPA/ITO memory device is based on the formation and annihilation of the metallic Cu conductive filaments by combining the I-V curves in the double logarithmic coordinates of the device.formation and annihilation.More importantly,the degradation of the resistive dielectric layer and the annihilation of the top electrode Cu can be achieved within 50 min under UV radiation,resulting in the physical destruction and functional failure of the memory device,which has excellent and controllable transient behavior.This thesis shows that the new transient Cu/cPPA/ITO memory devices designed and developed in this thesis have potential applications in information security storage and environmental friendly.