Fabrication Of MoS₂ Thin Film And Research On The Application Of Solar Cells

The Molybdenum disulfide?MoS₂?is a new graphene-like two-dimensional semiconductor material.Because MoS₂ has unique physical,optical and electrical properties,it has become a research focus of new semiconductor materials.Single layer MoS₂ has a direct band gap,high carrier mobility and excellent optical absorption.MoS₂has a very broad application prospect in semiconductor devices and optoelectronic devices.The HCS Chemistry software was used to simulate the hydrothermal reaction,the effect of the amount of each component on the hydrothermal reaction products was studied by the control variable method.The optimized parameters are the ratio of Mo6+,S and N₂H₄ 1:2:1.5,with these parameters that high purity reaction product MoS₂ can be obtained.MoS₂ was successfully prepared using?NH₄?₂MoO₄,S and N₂H₄ as reactants,the effects of temperature and reactant concentration on the structure and morphology of MoS₂ were studied.MoS₂ was characterized by Raman spectroscopy,XRD and SEM,the results showed that the temperature and concentration were directly proportional to the size and crystallinity of the MoS₂ nanosheets and inversely proportional to the specific surface of MoS_2.MoS₂ thin films were prepared by spin-coating MoS₂ which were prepared by hydrothermal reaction on ceramic sheets,the MoS₂ thin films were characterized by Raman spectroscopy,the results showed that MoS₂ thin films are composed of several single-layer MoS₂ thin films.The atmospheric pressure chemical vapor deposition?CVD?method is adopted to the preparation of single layer MoS₂ films with MoO₃ and S as reactants,characterization by the Optical Microscope,Raman spectroscopy and PL and AFM,the results showed that the MoS₂ thin films prepared by CVD consist of a single layer of MoS₂,have a direct band gap structure and good crystallinity.The MoS₂ thin films based solar cells with homogeneous and heterogeneous junctions were designed.The n-MoS₂/p-Si heterojunction solar cell was prepared by transferring the MoS₂ films prepared by hydrothermal method to the p-Si,the photoelectric conversion efficiency of the solar cell is 0.057%.The MoS₂ thin films prepared by CVD were doped with P-type effectively by oxygen plasma injection,and n-MoS₂/p-MoS₂ homogeneous junction solar cells were prepared.The photoelectric conversion efficiency of the solar cell is 0.033%.