Study Of The Preparation Of Molybdenum Disulfide With Various Two-dimensional Structures By Chemical Vapor Deposition

Graphene once became the focus of attention due to its unit sublayer thickness,high carrier mobility,linear performance spectrum,and high strength.However,its band gap-free energy band structure is not suitable for the production of circuits.Molybdenum disulfide has gradually become a research hotspot for new semiconductor materials due to its structural properties similar to graphene and more excellent energy band structure.As a typical transition metal layered binary compound,molybdenum disulfide has excellent thermal stability and chemical stability,so it is widely used in solid lubricants,electrode materials and reaction catalysts.At present,the method of preparing molybdenum disulfide by chemical vapor deposition method is relatively easy to grow Mo S2 nanolayers on the substrate,but the product morphology is different under the interference of fluctuations in the gas phase flow rate,reaction temperature,reaction time and other factors..In this paper,by adjusting the reaction time in the Mo S2 chemical vapor deposition preparation method,the reaction temperature of the high temperature zone of the tube furnace,the reaction temperature of the low temperature zone where the sulfur source is located,the atomic weight ratio of the molybdenum source of the sulfur source,and the relative position of the porcelain boat in the tube furnace(including silicon wafers)The relative distance between the porcelain boat and the molybdenum source,the stacking height of the molybdenum source in the porcelain boat),the inclination of the horizontal position of the silicon wafer and the tube furnace,the gas flow rate and other process parameters,the preparation of different morphologies,uniform structure and controllable thickness Mo S2 thin film structure.And explore the relationship between various preparation process parameters and nano Mo S2 film morphology.In this paper,XRD diffraction pattern,Raman scattering pattern,scanning electron microscope and other means are used to characterize the morphology and structure of the film.Through the analysis of the characterization data,the growth mechanism of molybdenum disulfide film with different morphologies is further studied.In this paper,by adjusting the above preparation parameters,we successfully prepared triangle,hexagon,diamond and other irregular sheet molybdenum disulfide films grown in the boundary.In addition,multi-layer triangles,multi-layer hexagons,and nano-flower-like structures have grown outside the boundary,and for the first time,a new type of nano-tube tubular molybdenum disulfide with a height ranging from 1 ?m to 100 ?m and a cross-sectional radius ranging from 300 nm to 20 ?m has been prepared by CVD.film.The product was tested and characterized by means of XRD diffraction pattern,Raman scattering pattern,scanning electron microscope,etc.,and the growth mechanism of various morphologies Mo S2 prepared by the experiment was summarized and analyzed.The conclusion of this thesis has certain reference value for the research on the preparation of various morphology Mo S2 thin films by CVD method and the application of Mo S2 thin films in the photoelectric field.