Preparation And Electrical Properties Of Indium Oxide Nanowire Field Effect Transistor

With the rapid development of nanotechnology in recent years,research on nanomaterials and devices has become a research hotspot in related fields.Indium oxide?In₂O₃?nanowires are widely used in sensors,catalysts,and field effect transistors due to their large forbidden band width,high transparency in the visible region,and stable chemical properties.This paper has carried out the following work for In₂O₃ nanowires.1.Preparation and Characterization of In₂O₃ Nanowire Structures.In this paper,indium oxide powder and graphite powder were used as raw materials,silicon wafers with gold nanoparticles were pre-thermally evaporated on the surface as the substrate,and gold nanoparticles were used as catalysts to prepare In₂O₃ nanowire materials by chemical vapor deposition.It is then characterized.The results show that the crystal structure of the prepared material is cubic crystal,and the material grows preferentially along the crystal face index?222?and has a high crystallinity.The quantity is considerable,the size distribution is uniform and relatively thin.2.Three different gate insulating layers of In₂O₃ nanowire field effect transistors were designed and fabricated.In this paper,silicon nitride?Si₃N₄?,silicon dioxide?SiO₂?and hafnium oxide?HfO₂?are used as the gate insulating layer,In₂O₃ nanowire material is the active layer,silicon wafer is used as the substrate,gold and chrome metal.The material is an indium oxide nanowire field effect transistor of the electrode.3.The electrical properties of different types of In₂O₃ nanowire field effect transistors were tested and analyzed.In this paper,the electrical properties of three kinds of Si₃N₄,HfO₂and SiO₂ acting as gate insulating layers In₂O₃ nanowire field-effect transistors were tested.The switching ratios were as high as 10⁷,10⁶ and 10⁸,respectively.The threshold voltage values were-2.8 V,-3.2 V and-12.1 V,the field-effect mobility is approximately 120 cm² V^-1 s^-1,40 cm² V^-1 s^-1,and 115 cm² V^-1 s^-1,respectively.The subthreshold slopes of the device are 0.17 mV/dec,respectively.0.15mV/dec and 0.18 mV/dec.The results show that the three types of In₂O₃nanowire FET devices designed and fabricated in this paper are all enhanced field effect transistors,but their electrical performance characteristics are different:Si₃N₄ gate insulating layer field effect transistor has higher mobility,SiO₂ gate insulation The layer field effect transistor switching ratio and subthreshold slope performance are better.The above analysis has certain guiding significance for the preparation and application of In₂O₃ nanowire field effect transistors.