Fabrication And Electrical Properties Of In₂O₃ Nanowire Field Effect Transistors

In recent years,as integrated circuit manufacturing processes approach physical limits,Moore's Law has gradually failed.The development trend of increasing integration has caused electronic devices into the field of nanoelectronic devices.Therefore,it is of great research significance to find new materials to replace traditional silicon materials and prepare new field-effect transistors as the basic unit of devices.Since the diameter growth of semiconductor nanowires is controllable,and the surrounding gate structure has a strong ability to control static electricity in the nanowire channels,the gate length of nanowire transistors can be further reduced,therefore,nanowire transistors are considered as an option to break the physical limit of integrated circuits.Indium oxide?In₂O₃?nanowire has great potential in transistor,storage and sensor applications owing to their suitable band width and high electron mobility.This article focuses on the electrical performance of In₂O₃ nanowire field effect transistors.In this article,we use In₂O₃ to do the following:?1?In₂O₃ nanowires were fabricated by simple chemical vapor deposition?CVD?,and the morphology,structure,optical properties and chemical valence of elements and composition of nanowires were characterized by SEM,XRD,PL and XPS.The growth mechanism was also explained.?2?In₂O₃ nanowire field effect transistor devices were successfully prepared through the steps of mapping,spin coating,electron beam lithography?EBL?,development,metallization,and metal lift-off.Morphology of the transistor were characterized by SEM,and the electrical properties of the prepared transistor were tested by semiconductor parameter analyzer.?3?In the work,a simple but effective strategy was carried out,Ag?Pt was deposited on In₂O₃ FET with different thickness by sputtering system via different deposition time,and the effect of Pt on the electrical property of In₂O₃ FETs was investigated.By preparing Ag nanoparticle functionalized In₂O₃ NWs to regulate the threshold voltage(V_th)of In₂O₃ NW FETs,successfully achieving enhanced-mode devices.The threshold voltage can be regulated from-6.9 V to+7 V by controlling Ag density via deposition time.In addition,the devices exhibited high performance:huge I_on/I_offff ratio>10⁸,large maximum saturation current?0.1 mA and excellent carrier mobility?129 cm²/?V?s?.By analyzing the electrical performance of In₂O₃ FETs before and after Pt deposition,the threshold voltage(V_th)of FETs tends to drift to the right,the I_on/I_offff and carrier concentration are a bit decrease but the carrier mobility is a bit increase,the carrier mobility of the transistor is as high as 139 cm²/?V?s?.