Study On The Preparation And Photocatalytic Properties Of 2D Nanomaterials By Atomic Deposition

2D nanomaterials are in 3D structures with 1D dimensions of 0.1-100 nm,other 2D infinitely extended materials.this makes it have the highly anisotropic completely unshown by other materials.because of this unique structure,two-dimensional nanomaterials have unique quantum domain effects and surface effects,so two-dimensional nanomaterials have completely different mechanical,electrical,optical and thermal effects.At present,the problem of environmental pollution becomes more and more acute,and the society is more and more urgent to the materials that can degrade pollutants efficiently.in this paper,two-dimensional nano Ga2O3 was prepared by atomic deposition technology,and Ga2O3 was combined with two-dimensional nano-semiconductor materials to form a P-N heterojunction,and they were investigated separately for photocatalysis.The two-dimensional nano Ga2O3 was deposited on the Si/SiO2 substrate using C33H57GaO6 as the precursor by atomic deposition.the experimental results showed that the Ga2O3 particles deposited on the Si/SiO2 substrate were evenly distributed and free of impurities.the growth rate(GPC)of the synthesized Ga2O3 was about 0.16 A/cycle.the growth curve of the Ga2O3 sample is linear and no nucleation delay,indicating that the self-limiting characteristics of the ALD growth process and the film thickness can be accurately obtained by changing the number of ALD cyclesTo make two-dimensional nanomaterials more suitable for photocatalytic applications,based on P semiconductor Ga2O3,the N semiconductor WO3 was combined to form a heterojunction structure,and 2 heterojunction structure composites were prepared.the WO3,of the two-dimensional structure was first prepared on the Si/SiO2 substrate and then a layer was deposited on it to form the P-N heterojunction structure.the results showed that the Ga2O3 particles deposited on the surface were flat spherical.compared with the simple two-dimensional WO3 and two-dimensional Ga2O3,there were voids between the particles on the surface of the two-dimensional heterojunction structure,which increased the specific surface area of the material surface.the sample has a good absorption effect on light with wavelength less than 550 nm,and its band gap is 2.10 ev,the charge transfer resistance of two-dimensional WO3-Ga2O3 heterojunction structure is about rCT equal to 4.8 k?,which is less than two-dimensional WO3 and two-dimensional Ga2O3..under uv irradiation(?=244 nm),2D heterostructures can completely degrade methyl orange within 120 h.For the preparation of the photodegradation efficiency higher two-dimensional nano materials,the WO3 replaced with better TiO2 photocatalytic effect,preparation process and WO3-Ga2O3 similar,the experimental results show that two-dimensional TiO2-Ga2O3 P-N heterostructure band gap of 2.07 ev,the charge transfer resistance heterojunction structure about ? rCT is equal to 4.5 k,at room temperature(lambda=244 nm)under the irradiation of ultraviolet light,72 hours can degrade over 90%of methyl orange,efficiency and WO3-Ga2O3 have bigger promotion,results show that the two-dimensional nano P-N heterostructure in photocatalysislts application has great potential and prospect..