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Investigation Of The Chemical Vapor Deposition And Properties Of The Two-Dimensional Tungsten Sulfide Films

Posted on:2021-03-03Degree:MasterType:Thesis
Country:ChinaCandidate:F HuangFull Text:PDF
GTID:2381330605951322Subject:Electronic information materials
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The electrical structure of hexagonal tungsten disulfide?WS2?is dependent on the thickness of the film.Unlike bulk materials,monolayer WS2 is a direct band gap semiconductor with a band gap of ca.1.9 eV.The high quantum efficiency(ca.106 cm-1)and carrier mobility(1000 cm2v-1s-1)make monolayer WS2 a wide potential application in the field of nano optoelectron devices.However,the controllable growth of the two-dimensional WS2 films is currently difficult to achieve,which limits its use in optoelectronic devices.In view of the current problems in the fabrication of the monolayer WS2 film,we investigated a novel chemical vapor deposition?CVD?method to grow continuous monolayer/multilayers WS2 with large-area.In this thesis,we deposited WS2 film on the silicon oxide/silicon substrate using water vapor as a transport agent and zinc oxide?ZnO?as a heterogeneous nucleating agent.The effects of the growth time,the amount of transport agent,and the carrier gas flow rate,cooling rate and growth atmosphere on the growth behavior of WS2 were studied.Based on the successful synthesis of two-dimensional WS2 thin films,the stability and electrical properties of tungsten sulfide were also studied.The results show that the WS2 film is unstable in air and decomposes when the temperature is higher than the room temperature.The higher the temperature,the poorer the stability.When the temperature increases to 400 ?,it will completely decompose.In addition,the plasma discharge in the air will also cause the decomposition of the monolayer WS2.In order to improve the stability of tungsten sulfide,PMMA film was used.It is found that the PMMA film which covered on the surface of the WS2 film can effectively protect the WS2 from oxidation in air.In the last part of this thesis,the photo-detector based on the organic/inorganic heterojunction structure was prepared and studied.The results show the detector with a response of 0.1 A/W is very sensitive to light,indicating monolayer/multilayer WS2 film has potential application in the field of photodetectors.
Keywords/Search Tags:Two-dimensional WS2 Films, CVD, transport agent, heterogeneous nucleating agent, stability, photodetector
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