Study On Preparation And Application Of Thin Film Materials Containing Mo Elements

In recent years,Mo,MoSe₂,Mo₂N have shown excellent performance in the fields of semiconductors,catalysts,layer materials,optoelectronics,batteries,capacitors,and medicine.,but preparation methods have some deficiencies.The binding force of the Mo film prepared by DC magnetron sputtering and the substrate is low,which is not conducive to application.The commonly used method of preparing MoSe₂ thin film is too costly and requires high equipment due to the use of hydrogen.During the preparation of Mo₂N by reactive magnetron sputtering,over-stoichiometric or N-rich Mo₂N is formed,which affects the structure and performance of Mo₂N.In this paper,the preparation methods of Mo,MoSe₂,and Mo₂N are studied,and a better preparation method is proposed.In this paper,a radio frequency magnetron sputtering method was used to successfully prepare a Mo film.We characterized and analyzed the prepared Mo film,and found that as the preparation power increases,the resistance of the Mo film decreases.At the same time,the increase of the preparation temperature will also reduce the resistance of the Mo film.We gave a better sputtering parameters for the preparation of Mo thin films:sputtering power of 160 W power,deposition time of 30min,deposition temperature of 120℃,and Si substrate.In this paper,the preparation of MoSe₂ film by solid-phase method was explored.We have tried to use C powder and sucrose as reducing agent to reduce MoO₃.We have found that carbon powder can reduce MoO₃ to Mo,but it cannot obtain a MoSe₂film on the substrate.Sucrose can not reduce MoO₃ after carbonization at high temperature.We try to selenize the Mo film to obtain a MoSe₂ film.We found the formation of Mo2N in the samples obtained by selenization.In this paper,Mo₂N thin film was prepared by the direct reaction of Mo thin film and N₂.XRD and SEM characterization of the prepared Mo₂N film was carried out,we found that the power,temperature,deposition time and substrate type during the preparation of the Mo film all affect the crystal structure and surface morphology of the obtained Mo₂N film.After the analysis of the characterization results,the optimal method for preparing the Mo₂N film was proposed as follows:the optimal Mo film precursor for preparing the Mo₂N film was prepared at 140 W power,deposition time30 min,at the temperature of 120°C on the Si substrate The Mo₂N film can be obtained by processing the Mo film under Ar/N₂ atmosphere at high temperature（800℃）.