Simulation Of Solar Cells Based On MoS₂ Materials

Molybdenum disulfide?MoS₂?as one of the TMDs?Transition Metal Disulfide?has been considered as one of the most promising materials to be used in semiconductor and renewable energy fields due to its excellent chemical and physical properties.Adding MoS₂to the solar cell material can improve the performance of the solar cell obviously.MoS₂can be used as the electron transport layer,hole transport layer,interface layer and protection layer.Reasonable use of MoS₂can improve the conversion efficiency of solar cells.In this paper,a new heterojunction solar cell structure model,MoS₂?n?/a-Si?i?/c-Si?p?/?c-Si?p+?,is designed.The parameters of each layer in the new structure are simulated and optimized by the heterojunction solar cell simulation software AFORS-HET.The solar energy in the case of adding Zn O and Ag electrodes and ITO and Ag electrodes on MoS₂?n?/a-Si?i?/c-Si?p?/?c-Si?p+?structure was simulated with AFORS-HET software as for battery performance,it was found that the electrode material did not greatly affect the new heterojunction structure.Compared with MoS₂?n?/c-Si?p?solar cells and MoS₂?n?/a-Si?i?/c-Si?p?solar cells,the performance of heterojunction solar cells has been significantly improved with the addition of the intrinsic layer and the back-surface field.The parameters of the structure,such as the thickness of the emitter layer,the dopant concentration of the emitter layer,the thickness of the intrinsic layer,the dopant concentration of the absorption layer,the thickness of the back-surface field,the band gap of the back field,the dopant concentration of the back-surface field,the defect state of the emitter layer and the absorption layer,and the change of the external conditions,including the temperature,were determined by the AFORS-HET software.The effects of their changes on the structure and properties of MoS₂?n?/a-Si?i?/c-Si?p?/?c-Si?p+?were analyzed.AFORS-HET software is used to simulate the structure and get the best performance value of the parameters of each layer.After the simulation analysis,we get the following conclusions:the MoS₂?n?/a-Si?i?/c-Si?p?/?c-Si?p+?heterojunction solar cell with a single layer of 0.65 nm thickness of MoS₂emission layer has better performance.When the temperature is 300 K and350 K,the thickness of the back field has no effect on the structure.When the defect state is within 10¹¹cm^-3,the performance of the solar cell is good.In practice,the generation of defect state should be minimized.After detailed simulation and optimization of the parameters of each layer,the conversion efficiency reaches 23.06%when the temperature is 250 K,21.05%when the temperature is 300 K,and 18.91%when the temperature is 350 K.The conversion efficiency of MoS₂?n?/a-Si?i?/c-Si?p?/?c-Si?p+?heterojunction solar cells without electrodes is34.37%at 250 K,31.14%at 300 K and 27.91%at 350 K.The simulation results of this paper provide a theoretical basis for the future research and practical production of heterojunction solar cells with MoS₂,and have certain theoretical and practical significance.